Toshiba - TPS621(B,F)

BPX86 by Infineon Technologies is a phototransistor with max operating temp of 85°C and min operating temp of -40°C. It has a max dark current of 200nA and response time of 0.000008s. Ideal for applications requiring through hole mounting, such as light sensing in various electronic devices.

PHOTO TRANSISTOR; Shape: ROUND; Maximum Operating Temperature: 125 Cel; Size: 4.7 mm; Nominal Light Current: .4 mA; Infrared (IR) Range: YES;

PHOTO TRANSISTOR; Peak Wavelength (nm): 900; Maximum Operating Temperature: 85 Cel; Size: 3.1 mm; Shape: ROUND; No. of Functions: 1;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Power Dissipation: .06 W; Maximum Dark Current: 100 nA; Maximum Operating Temperature: 100 Cel; Minimum Operating Temperature: -40 Cel;

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 80 Cel; Maximum On State Current: .05 A; Maximum Power Dissipation: .1 W;

PHOTO TRANSISTOR; Mounting Feature: RADIAL MOUNT; Shape: ROUND; Minimum Operating Temperature: -65 Cel; Maximum Dark Current: 100 nA; No. of Functions: 1;

VEMT2023SLX01 by Vishay Intertechnology is a single configuration phototransistor with peak wavelength of 860nm. It operates in temperatures ranging from -40°C to 100°C and has a nominal light current of 2.7mA. This optoelectronic component is suitable for applications requiring infrared range detection and a min collector-emitter breakdown voltage of 20V.

PHOTO DARLINGTON; Maximum Operating Temperature: 75 Cel; Minimum Collector-emitter Breakdown Voltage: 30 V; Peak Wavelength (nm): 870; Additional Features: HIGH SENSITIVITY; SIDE VIEW; No. of Functions: 1;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .165 W; Minimum Operating Temperature: -55 Cel; Maximum Response Time: .000007 s;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Operating Temperature: 125 Cel; Maximum On State Current: .05 A;

PHOTO DARLINGTON; Maximum Operating Temperature: 75 Cel; Shape: ROUND; Peak Wavelength (nm): 720; Minimum Collector-emitter Breakdown Voltage: 30 V; Infrared (IR) Range: NO;

PHOTO TRANSISTOR;

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; JESD-609 Code: e0; Maximum Dark Current: 400 nA;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 100 Cel; Maximum Response Time: .00001 s; Maximum Power Dissipation: .06 W; Maximum Dark Current: 100 nA;

Photo Transistors; Mounting Feature: SURFACE MOUNT; Maximum Dark Current: 3 nA; Maximum On State Current: .02 A; Peak Wavelength (nm): 570; Maximum Operating Temperature: 85 Cel;

PHOTO TRANSISTOR; Terminal Finish: PURE TIN OVER NICKEL; Maximum Operating Temperature: 100 Cel; Configuration: SINGLE; Nominal Light Current: .016 mA; Infrared (IR) Range: YES;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; Maximum Dark Current: 100 nA; Maximum Operating Temperature: 100 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Power Dissipation: .07 W; Maximum Dark Current: 200 nA; Maximum Operating Temperature: 75 Cel; Peak Wavelength (nm): 880;

PHOTO TRANSISTOR; Nominal Light Current: .01 mA; Configuration: SINGLE; Infrared (IR) Range: NO; No. of Functions: 1; Minimum Operating Temperature: -25 Cel;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Nominal Light Current: .65 mA; Maximum Dark Current: 200 nA; Maximum Operating Temperature: 100 Cel; Maximum On State Current: .015 A;