Onsemi - KDT00030ATR

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .1 A; Peak Wavelength (nm): 850; Minimum Operating Temperature: -40 Cel;

BPX86 by Infineon Technologies is a phototransistor with max operating temp of 85°C and min operating temp of -40°C. It has a max dark current of 200nA and response time of 0.000008s. Ideal for applications requiring through hole mounting, such as light sensing in various electronic devices.

TEFT4300 by Vishay Intertechnology is a 3mm phototransistor with peak wavelength of 925nm. It operates b/w -40 to 100°C, with max power dissipation of 0.185W and response time of 0.0000023s. Ideal for applications requiring IR detection in through-hole mounting configurations.

Photo Transistors; Mounting Feature: SURFACE MOUNT; Maximum Response Time: .000008 s; Minimum Operating Temperature: -60 Cel; Maximum Power Dissipation: .05 W; Maximum Operating Temperature: 125 Cel;

PHOTO TRANSISTOR; Nominal Light Current: .08 mA; Size: 1.5 mm; Minimum Collector-emitter Breakdown Voltage: 30 V; Minimum Operating Temperature: -25 Cel; Infrared (IR) Range: YES;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -65 Cel; No. of Functions: 1; Maximum Dark Current: 25 nA; Minimum Collector-emitter Breakdown Voltage: 50 V;

PHOTO TRANSISTOR; Maximum Dark Current: 100 nA; Shape: ROUND; Infrared (IR) Range: YES; Minimum Collector-emitter Breakdown Voltage: 30 V; Configuration: SINGLE;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -55 Cel; JESD-609 Code: e0; Maximum On State Current: .05 A;

PHOTO TRANSISTOR; Configuration: SINGLE; Size: 2.54 mm; No. of Functions: 1; Nominal Light Current: 1.2 mA; Minimum Collector-emitter Breakdown Voltage: 70 V;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; JESD-609 Code: e0; Maximum Dark Current: 300 nA;

PHOTO TRANSISTOR; Terminal Finish: PURE TIN OVER NICKEL; Maximum Operating Temperature: 100 Cel; Configuration: SINGLE; Nominal Light Current: .016 mA; Infrared (IR) Range: YES;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; JESD-609 Code: e0; Maximum Dark Current: 200 nA;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 100 nA; Infrared (IR) Range: YES; Additional Features: SIDE VIEW; Nominal Light Current: .25 mA;

TEKT5400S-ASZ by Vishay Intertechnology is a 3mm round phototransistor with peak wavelength of 920nm. It operates b/w -40 to 85°C, has max power dissipation of 0.15W, and collector-emitter breakdown voltage of 70V. Ideal for IR applications with nominal light current of 4mA and dark current up to 100nA.

PHOTO TRANSISTOR; Terminal Finish: Matte Tin (Sn); Size: 5 mm; Maximum Operating Temperature: 85 Cel; No. of Functions: 1; JESD-609 Code: e3;

PHOTO TRANSISTOR; Minimum Operating Temperature: -25 Cel; Maximum Dark Current: 100 nA; Maximum Operating Temperature: 85 Cel; Nominal Light Current: .04 mA; No. of Functions: 1;

PHOTO TRANSISTOR;

PHOTO TRANSISTOR; Size: 1.65 mm; No. of Functions: 1; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -25 Cel; Peak Wavelength (nm): 720;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .0002 s; Infrared (IR) Range: NO; Peak Wavelength (nm): 720;

Photo Transistors; Mounting Feature: SURFACE MOUNT; Maximum Dark Current: 200 nA; Maximum On State Current: .05 A; Peak Wavelength (nm): 950; Maximum Response Time: .000002 s;