Qt Optoelectronics - QSB363.ZR

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; Maximum On State Current: .05 A; Peak Wavelength (nm): 850;

PHOTO TRANSISTOR;

PHOTO TRANSISTOR; Terminal Finish: Matte Tin (Sn); Maximum Dark Current: 100 nA; Minimum Collector-emitter Breakdown Voltage: 6 V; No. of Functions: 1; Maximum Operating Temperature: 85 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 200 nA; Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 850; Maximum On State Current: .05 A;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .2 W; Minimum Operating Temperature: -55 Cel; Peak Wavelength (nm): 900;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -55 Cel; Maximum On State Current: .05 A; Maximum Response Time: .000015 s;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000012 s; Peak Wavelength (nm): 870; Minimum Operating Temperature: -40 Cel;

PHOTO TRANSISTOR; Peak Wavelength (nm): 870; Configuration: SINGLE; Infrared (IR) Range: YES; Minimum Collector-emitter Breakdown Voltage: 20 V; Size: 3 mm;

PHOTO TRANSISTOR; Peak Wavelength (nm): 800; Configuration: SINGLE; Infrared (IR) Range: YES; Minimum Operating Temperature: -30 Cel; Maximum Dark Current: 100 nA;

PHOTO TRANSISTOR; Terminal Finish: Matte Tin (Sn); Infrared (IR) Range: YES; No. of Functions: 1; Configuration: SINGLE; JESD-609 Code: e3;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Nominal Light Current: .65 mA; Maximum Dark Current: 200 nA; Maximum Operating Temperature: 100 Cel; Maximum On State Current: .015 A;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; JESD-609 Code: e0; Peak Wavelength (nm): 900;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Dark Current: 10 nA; Peak Wavelength (nm): 800;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Configuration: SINGLE; Shape: SQUARE; Packing Method: TR, 7 INCH; Maximum Dark Current: 50 nA;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Maximum Power Dissipation: .075 W; Maximum On State Current: .02 A; Maximum Dark Current: 100 nA;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Infrared (IR) Range: YES; Nominal Light Current: 2.6 mA; Minimum Collector-emitter Breakdown Voltage: 60 V; Minimum Operating Temperature: -25 Cel;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Peak Wavelength (nm): 930; Maximum Operating Temperature: 125 Cel; Maximum Dark Current: 100 nA; Minimum Operating Temperature: -65 Cel;

PHOTO DARLINGTON; Maximum Operating Temperature: 75 Cel; Minimum Collector-emitter Breakdown Voltage: 30 V; Peak Wavelength (nm): 870; Additional Features: HIGH SENSITIVITY; SIDE VIEW; No. of Functions: 1;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 125 Cel; Maximum Dark Current: 100 nA; Maximum Response Time: .000015 s;

Osram Opto Semiconductors' BPY62-3/4 is an 830nm peak wavelength phototransistor with a max temp of 125°C. It has a nominal light current of 5.8mA and max response time of 0.000007s. Ideal for applications requiring IR detection, it features through-hole mounting and can handle up to 0.1A on-state current.