Rochester Electronics - 2N5486G

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Minimum Power Gain (Gp): 15 dB; Package Style (Meter): CYLINDRICAL;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Finish: TIN; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Qualification: Not Qualified;

BF999E6327HTSA1 by Infineon Technologies is a RF Small Signal Field Effect Transistor (FET) with N-CHANNEL polarity. It operates in depletion mode and has a min DS breakdown voltage of 20V. This transistor is suitable for applications in the very high frequency band.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-609 Code: e3; Transistor Application: AMPLIFIER; Terminal Form: FLAT;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Package Body Material: PLASTIC/EPOXY; Operating Mode: DUAL GATE, ENHANCEMENT MODE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Qualification: Not Qualified; JEDEC-95 Code: TO-92;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Transistor Application: AMPLIFIER; Package Style (Meter): CYLINDRICAL;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G4; Maximum Drain Current (ID): .03 A; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-30 Code: R-PDSO-G4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Operating Mode: DEPLETION MODE; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; JESD-30 Code: R-PDSO-G4; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Feedback Capacitance (Crss): 1 pF; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (ID): .04 A; Case Connection: SOURCE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JESD-30 Code: O-PBCY-T3; Transistor Application: AMPLIFIER; JESD-609 Code: e0;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Drain Current (ID): .03 A; No. of Terminals: 4;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Transistor Element Material: SILICON; Operating Mode: ENHANCEMENT MODE; Minimum Power Gain (Gp): 22.8 dB;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; No. of Elements: 1; JESD-609 Code: e0;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G4; Terminal Form: GULL WING; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 4; Additional Features: LOW NOISE, HIGH RELIABILITY; Package Style (Meter): MICROWAVE;