NXP Semiconductors - BF410C

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Terminal Form: THROUGH-HOLE; Terminal Finish: MATTE TIN;

RF Small Signal Field-Effect Transistors; JESD-609 Code: e3; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 3;

JANTX2N3822 by Defense Logistics Agency is an N-CHANNEL RF FET with 50V DS Breakdown Voltage. Operating in DEPLETION MODE, it offers a Crss of 3pF for VERY HIGH FREQUENCY applications. This SILICON transistor, compliant with MIL-19500/375G, features a CYLINDRICAL package ideal for RF Small Signal circuits.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Case Connection: SOURCE; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: JUNCTION; Terminal Form: GULL WING; JEDEC-95 Code: TO-236AB;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Position: DUAL; Maximum Drain Current (ID): .03 A; Package Body Material: PLASTIC/EPOXY;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; Package Style (Meter): SMALL OUTLINE;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: AMPLIFIER; Operating Mode: DUAL GATE, DEPLETION MODE; Maximum Drain Current (ID): .03 A;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Operating Mode: DEPLETION MODE; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Minimum DS Breakdown Voltage: 50 V; Terminal Form: WIRE; Qualification: Not Qualified;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .05 A; JEDEC-95 Code: TO-92;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Element Material: SILICON; No. of Terminals: 4;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Terminal Finish: MATTE TIN; Package Style (Meter): SMALL OUTLINE;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: AMPLIFIER; Minimum DS Breakdown Voltage: 20 V; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: DUAL GATE, ENHANCEMENT MODE; JESD-30 Code: R-PDSO-G4; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY; Transistor Element Material: GALLIUM ARSENIDE; Maximum Drain Current (Abs) (ID): .1 A;