New England Semiconductor - 2N2222A

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2N2222A by New England Semiconductor

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Manufacturer New England Semiconductor
Manufacturer's Part Number 2N2222A
Description NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Datasheet 2N2222A Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 300 MHz
Package Body Material: METAL
Maximum Collector Current (IC): .8 A
Configuration: SINGLE
Transistor Element Material: SILICON
Maximum Turn On Time (ton): 35 ns
Sub-Category: Other Transistors
Surface Mount: NO
Terminal Finish: Tin/Lead (Sn/Pb)
No. of Terminals: 3
Maximum Power Dissipation (Abs): .5 W
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
Maximum Turn Off Time (toff): 285 ns
JESD-30 Code: O-MBCY-W3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: WIRE
Maximum Operating Temperature: 200 Cel
JEDEC-95 Code: TO-18
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 75
JESD-609 Code: e0
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 40 V
Maximum Collector-Base Capacitance: 8 pF
Maximum VCEsat: .3 V
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