NXP Semiconductors - BLF177,112

STMicroelectronics PD57060-E is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 7A Drain Current. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it operates in ENHANCEMENT MODE with a max power dissipation of 0.079W. The PLASTIC/EPOXY package features GULL WING terminals and can withstand up to 165°C operating temperature.

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Position: DUAL; Transistor Application: AMPLIFIER; Operating Mode: ENHANCEMENT MODE;

NXP Semiconductors' MRFE6VP61K25HR6 is an N-CHANNEL RF Power FET with 125V DS Breakdown Voltage, operating in the Ultra High Frequency Band. It features a Common Source configuration, 1300W Max Power Dissipation, and is ideal for AMPLIFIER applications. This CERAMIC/METAL-SEALED COFIRED transistor has a RECTANGULAR package shape and operates in ENHANCEMENT MODE at up to 225°C.

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Element Material: GALLIUM NITRIDE; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Package Shape: RECTANGULAR; Case Connection: SOURCE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Terminal Form: FLAT; Package Shape: SQUARE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Transistor Application: AMPLIFIER; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Terminal Finish: MATTE TIN; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52.8 W; Terminal Finish: TIN LEAD; Transistor Application: AMPLIFIER;

RF Power Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 44 W; Maximum Drain Current (ID): 5 A; No. of Terminals: 5;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY; Case Connection: SOURCE; Terminal Position: DUAL;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 36.5 W; Maximum Drain Current (ID): 2 A; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 68 W; Additional Features: HIGH RELIABILITY; Moisture Sensitivity Level (MSL): NOT APPLICABLE;

N-CHANNEL; Maximum Time At Peak Reflow Temperature (s): 40; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 225 Cel;

The NXP Semiconductors MW6S004NT1 is a single N-channel RF Power FET with a 68V DS breakdown voltage. It operates in enhancement mode, suitable for amplifier applications in the L band. This transistor features a small outline package, metal-oxide semiconductor technology, and can withstand temperatures up to 150°C.

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;

CGH40010F by Wolfspeed is an N-CHANNEL RF Power FET with a 120V DS Breakdown Voltage. It operates in the C BAND frequency range and uses Gallium Nitride technology for high electron mobility. Ideal for amplifier applications, this transistor has a max operating temperature of 105°C and features a ceramic, metal-sealed co-fired package body.