Wolfspeed - PTFA080551FV4R250XTMA1

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Package Shape: RECTANGULAR; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR; Terminal Form: FLAT;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: ROUND; Terminal Form: FLAT; Qualification: Not Qualified;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Package Style (Meter): FLANGE MOUNT; Maximum Drain Current (ID): 20 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Package Shape: RECTANGULAR; JESD-30 Code: R-CDSO-G2;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F4; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Operating Mode: ENHANCEMENT MODE;

NXP Semiconductors' MRFE6VP61K25HR6 is an N-CHANNEL RF Power FET with 125V DS Breakdown Voltage, operating in the Ultra High Frequency Band. It features a Common Source configuration, 1300W Max Power Dissipation, and is ideal for AMPLIFIER applications. This CERAMIC/METAL-SEALED COFIRED transistor has a RECTANGULAR package shape and operates in ENHANCEMENT MODE at up to 225°C.

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Case Connection: SOURCE; No. of Elements: 1; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Package Shape: RECTANGULAR;

RF Power Field-Effect Transistors; JESD-609 Code: e3; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Case Connection: SOURCE; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

N-CHANNEL; Surface Mount: YES; Minimum DS Breakdown Voltage: 10 V; Operating Mode: DEPLETION MODE; Package Shape: RECTANGULAR; Terminal Form: NO LEAD;

RF Power Field-Effect Transistors;

RF Power Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 73 W; Maximum Operating Temperature: 165 Cel; Maximum Drain Current (ID): 5 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Additional Features: HIGH RELIABILITY; No. of Terminals: 4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 160 W; Maximum Drain Current (Abs) (ID): 5 A; JESD-609 Code: e3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (ID): 36 A; Peak Reflow Temperature (C): NOT SPECIFIED;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;