A5G23H065NT4 by NXP Semiconductors | Vyrian | Semiconductor & Electronic Component Distributor

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	A5G23H065NT4
Description	N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Element Material: GALLIUM NITRIDE; Maximum Operating Temperature: 150 Cel;
Datasheet	A5G23H065NT4 Datasheet

NAME	DESCRIPTION
Minimum Power Gain (Gp):	14 dB
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	40
Configuration:	SEPARATE, 2 ELEMENTS
Transistor Element Material:	GALLIUM NITRIDE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Minimum Operating Temperature:	-55 Cel
No. of Terminals:	6
Minimum DS Breakdown Voltage:	125 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-N6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	DEPLETION MODE
Highest Frequency Band:	S BAND
Maximum Operating Temperature:	150 Cel
Case Connection:	SOURCE
Peak Reflow Temperature (C):	260
Moisture Sensitivity Level (MSL):	3

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