NXP Semiconductors - BF909TRL

N-CHANNEL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 225 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-609 Code: e3; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 1;

RF Small Signal Field-Effect Transistors;

SMMBFJ310LT1G by Onsemi is an N-CHANNEL RF Small Signal FET with a max power dissipation of 0.225W and a max operating temperature of 150°C. It is surface mountable and commonly used in junction field effect transistor applications.

D2081UK by Tt Electronics Plc is an N-CHANNEL RF Small Signal FET for AMPLIFIER applications. It features a 65V DS Breakdown Voltage, 11 dB Power Gain, and operates in ENHANCEMENT MODE at up to 150°C. With GULL WING terminals and ULTRA HIGH FREQUENCY capabilities, it's ideal for high-performance RF amplification needs.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JEDEC-95 Code: TO-92; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Operating Mode: DEPLETION MODE;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Transistor Application: AMPLIFIER; Terminal Position: DUAL;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; JEDEC-95 Code: TO-236AB; Moisture Sensitivity Level (MSL): 1;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR; Terminal Form: GULL WING;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Package Shape: RECTANGULAR; Field Effect Transistor Technology: JUNCTION;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; Package Style (Meter): CYLINDRICAL; Transistor Application: AMPLIFIER;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; Qualification: Not Qualified; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G4; Maximum Feedback Capacitance (Crss): 45 pF;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 10 W; Moisture Sensitivity Level (MSL): NOT APPLICABLE; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: L BAND; No. of Elements: 1; Additional Features: HIGH RELIABILITY;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; No. of Elements: 1; Terminal Form: WIRE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Position: BOTTOM; Maximum Feedback Capacitance (Crss): 1 pF; Operating Mode: DEPLETION MODE;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Style (Meter): SMALL OUTLINE; Qualification: Not Qualified;