Agilent Technologies - ATF-36163-TR1G

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: AMPLIFIER; Qualification: Not Qualified; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 160 Cel; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PDSO-G4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Field Effect Transistor Technology: JUNCTION; Minimum DS Breakdown Voltage: 25 V; Maximum Feedback Capacitance (Crss): 3 pF;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Package Body Material: METAL; Maximum Feedback Capacitance (Crss): .8 pF;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Form: GULL WING; No. of Terminals: 3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Minimum DS Breakdown Voltage: 30 V; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Qualification: Not Qualified; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Style (Meter): SMALL OUTLINE; Qualification: Not Qualified;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Package Style (Meter): SMALL OUTLINE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Terminals: 3; JESD-609 Code: e0; Package Body Material: PLASTIC/EPOXY;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Case Connection: SOURCE;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Reference Standard: IEC-60134; Case Connection: SOURCE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JEDEC-95 Code: TO-92; Maximum Feedback Capacitance (Crss): 2.5 pF; Terminal Form: THROUGH-HOLE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JESD-30 Code: O-MBCY-W4; JESD-609 Code: e0; Maximum Feedback Capacitance (Crss): 2 pF;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 104 V; JESD-30 Code: R-CDFM-F4; Package Style (Meter): FLANGE MOUNT;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: JUNCTION; Terminal Position: DUAL; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; No. of Terminals: 4; Operating Mode: DUAL GATE, ENHANCEMENT MODE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Application: AMPLIFIER; No. of Terminals: 3; Minimum DS Breakdown Voltage: 25 V;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Transistor Element Material: SILICON; Transistor Application: AMPLIFIER;