NXP Semiconductors - BLP10H605

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: R-PDSO-G4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; No. of Terminals: 3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Application: AMPLIFIER; No. of Terminals: 3; Package Shape: ROUND;

N-CHANNEL; Maximum Drain Current (Abs) (ID): .055 A; Field Effect Transistor Technology: METAL SEMICONDUCTOR; Maximum Drain Current (ID): .055 A; Maximum Operating Temperature: 125 Cel; Maximum Power Dissipation Ambient: .2 W;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JESD-30 Code: O-PBCY-T3; Package Body Material: PLASTIC/EPOXY; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Form: GULL WING; No. of Terminals: 3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 6 V;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: SOURCE; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (ID): .04 A;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Drain Current (Abs) (ID): .03 A; Transistor Application: AMPLIFIER; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Terminal Form: GULL WING; Maximum Drain Current (ID): .04 A;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 4; Transistor Element Material: SILICON; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Terminal Form: GULL WING; Operating Mode: DEPLETION MODE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Maximum Operating Temperature: 200 Cel; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Case Connection: SOURCE; No. of Elements: 2; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .165 W; Maximum Drain Current (ID): .025 A; JESD-30 Code: R-PQMW-F4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Case Connection: SOURCE; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Field Effect Transistor Technology: JUNCTION; JEDEC-95 Code: TO-92; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Transistor Application: AMPLIFIER; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Drain Current (ID): .03 A; Terminal Position: DUAL;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; No. of Elements: 2;