NE3210S01-T1B by Nec Electronics | Vyrian | Semiconductor & Electronic Component Distributor

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Manufacturer	Nec Electronics
Manufacturer's Part Number	NE3210S01-T1B
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 3 V; Transistor Element Material: SILICON; Highest Frequency Band: KU BAND;
Datasheet	NE3210S01-T1B Datasheet

NAME	DESCRIPTION
Minimum Power Gain (Gp):	12 dB
Package Body Material:	UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	HETERO-JUNCTION
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	.015 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	4
Minimum DS Breakdown Voltage:	3 V
Qualification:	Not Qualified
Terminal Position:	RADIAL
Package Style (Meter):	DISK BUTTON
JESD-30 Code:	O-XRDB-G4
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	GULL WING
Operating Mode:	DEPLETION MODE
Highest Frequency Band:	KU BAND
Case Connection:	SOURCE
Peak Reflow Temperature (C):	230

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