Onsemi - BF256A

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Package Body Material: PLASTIC/EPOXY; No. of Terminals: 3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Operating Temperature: 150 Cel; Transistor Application: AMPLIFIER; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; No. of Terminals: 3; Operating Mode: DEPLETION MODE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Maximum Operating Temperature: 200 Cel; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: AMPLIFIER; JESD-30 Code: R-PDSO-G4; Minimum DS Breakdown Voltage: 18 V;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 20 V; JESD-30 Code: R-PDSO-G3; Maximum Drain Current (ID): .04 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JEDEC-95 Code: TO-92; Operating Mode: DEPLETION MODE; Package Style (Meter): CYLINDRICAL;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Position: BOTTOM; Operating Mode: DEPLETION MODE; Minimum DS Breakdown Voltage: 30 V;

PD84001 by STMicroelectronics is an N-CHANNEL RF Small Signal FET with a min DS Breakdown Voltage of 18V. It is used as an amplifier in the ULTRA HIGH FREQUENCY BAND, with a max Drain Current of 1.5A and a Power Dissipation of 6W.

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Field Effect Transistor Technology: JUNCTION; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30;

ATF-531P8-BLK by Broadcom is an N-channel RF FET transistor with a min DS breakdown voltage of 7V. It has a power gain of 18.5 dB and is commonly used as an amplifier in C band applications.

N-CHANNEL; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): .06 A; Maximum Power Dissipation Ambient: .18 W; Maximum Drain Current (Abs) (ID): .06 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Body Material: PLASTIC/EPOXY; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Field Effect Transistor Technology: JUNCTION; Moisture Sensitivity Level (MSL): 1;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Case Connection: SOURCE; Transistor Element Material: GALLIUM ARSENIDE; Qualification: Not Qualified;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; Operating Mode: ENHANCEMENT MODE; No. of Terminals: 4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Maximum Drain Current (ID): .03 A; Field Effect Transistor Technology: JUNCTION;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Style (Meter): CYLINDRICAL; Operating Mode: DEPLETION MODE; Terminal Form: THROUGH-HOLE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Finish: TIN; Operating Mode: DEPLETION MODE; Maximum Operating Temperature: 160 Cel;

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Terminal Finish: TIN LEAD; Field Effect Transistor Technology: JUNCTION; JESD-30 Code: O-MBCY-W4;