NXP Semiconductors - BF1204

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BF1204 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BF1204
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 2; Maximum Drain Current (ID): .03 A;
Datasheet BF1204 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: COMPLEX
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): .03 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 6
Maximum Power Dissipation (Abs): .2 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: DUAL GATE, ENHANCEMENT MODE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 150 Cel
Minimum Power Gain (Gp): 21 dB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 10 V
Qualification: Not Qualified
Additional Features: LOW NOISE
Maximum Drain Current (Abs) (ID): .03 A
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