NXP Semiconductors - BF245B,112

BF245B,112 by NXP Semiconductors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	BF245B,112
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Terminal Form: THROUGH-HOLE; Terminal Finish: MATTE TIN;
Datasheet	BF245B,112 Datasheet

BF245B,112 Technical Details

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	JUNCTION
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	.025 A
Sub-Category:	Other Transistors
Surface Mount:	NO
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.3 W
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-PBCY-T3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	THROUGH-HOLE
Operating Mode:	DEPLETION MODE
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	150 Cel
JEDEC-95 Code:	TO-92
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	30 V
Qualification:	Not Qualified

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