Motorola - MRF176GU

RF Power Field-Effect Transistors; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Finish: TIN;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 24 A; Transistor Element Material: GALLIUM NITRIDE; No. of Elements: 1;

AFV10700HSR5 by NXP Semiconductors is an N-CHANNEL RF Power FET with a min DS Breakdown Voltage of 105V and a Min Power Gain of 18dB. Commonly used in amplifiers, it operates in the L BAND frequency range. This CERAMIC, METAL-SEALED COFIRED transistor has a max operating temperature of 225°C and can handle peak reflow temperatures up to 260°C.

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; No. of Terminals: 2; Transistor Application: AMPLIFIER;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Additional Features: HIGH RELIABILITY; No. of Terminals: 4;

NXP's MRF6V10010NR4 is a single N-channel RF FET with 100V DS breakdown voltage, ideal for amplifier applications in L Band. It features a plastic/epoxy package, operates in enhancement mode at up to 200°C, and has a moisture sensitivity level of 3.

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 74 W; Transistor Element Material: SILICON; Operating Mode: ENHANCEMENT MODE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 7 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Feedback Capacitance (Crss): 14 pF; No. of Terminals: 4; Operating Mode: ENHANCEMENT MODE;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Position: DUAL; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Application: AMPLIFIER; JESD-30 Code: R-CDFM-F2;

N-CHANNEL; Configuration: SINGLE; Maximum Power Dissipation (Abs): 648 W; Maximum Operating Temperature: 200 Cel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (ID): 40 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 186 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: FLAT;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFP-F2; No. of Terminals: 2; Terminal Form: FLAT;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: S-CQFM-F6; Minimum DS Breakdown Voltage: 65 V;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Terminal Form: FLAT; Maximum Drain Current (ID): 16 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 217 W; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR;