NXP Semiconductors - MRF6V10010NR4

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; No. of Terminals: 2; Terminal Position: DUAL;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR; Terminal Form: FLAT;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; JESD-30 Code: R-CDFM-F4; Package Shape: RECTANGULAR;

AFV10700HSR5 by NXP Semiconductors is an N-CHANNEL RF Power FET with a min DS Breakdown Voltage of 105V and a Min Power Gain of 18dB. Commonly used in amplifiers, it operates in the L BAND frequency range. This CERAMIC, METAL-SEALED COFIRED transistor has a max operating temperature of 225°C and can handle peak reflow temperatures up to 260°C.

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 36.5 W; Package Shape: RECTANGULAR; No. of Terminals: 2;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; No. of Elements: 2; Minimum DS Breakdown Voltage: 104 V;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 165 W; Package Style (Meter): FLANGE MOUNT; Package Body Material: PLASTIC/EPOXY;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 120 V; No. of Terminals: 6; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Terminal Position: DUAL; Transistor Application: AMPLIFIER;

N-CHANNEL; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Minimum DS Breakdown Voltage: 65 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; No. of Elements: 2;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; No. of Elements: 1; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

RF Power Field-Effect Transistors; Terminal Finish: MATTE TIN; Moisture Sensitivity Level (MSL): 3; JESD-609 Code: e3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52.8 W; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Qualification: Not Qualified;

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Moisture Sensitivity Level (MSL): NOT APPLICABLE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Additional Features: ESD PROTECTED; JESD-30 Code: R-CDFP-F2;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Minimum DS Breakdown Voltage: 125 V; Case Connection: SOURCE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Transistor Application: AMPLIFIER; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 12.5 W; Maximum Drain Current (ID): .6 A; No. of Elements: 1;