STMicroelectronics - LET9085

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 95 W; Case Connection: SOURCE; Package Shape: RECTANGULAR;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;

N-CHANNEL; Surface Mount: YES; Moisture Sensitivity Level (MSL): 3; Package Body Material: PLASTIC/EPOXY; Peak Reflow Temperature (C): 260; JESD-30 Code: R-PQSO-N4;

GS61008T-MR by Gan Systems is an N-CHANNEL RF FET in PLASTIC/EPOXY package. It operates in ENHANCEMENT MODE for SWITCHING applications at 100V DS Breakdown Voltage. With GALLIUM NITRIDE technology, it handles up to 90A ID and supports VERY HIGH FREQUENCY BAND operations.

RF Power Field-Effect Transistors;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Minimum DS Breakdown Voltage: 65 V;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Package Style (Meter): FLATPACK; Terminal Form: FLAT; Operating Mode: ENHANCEMENT MODE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Qualification: Not Qualified; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62.5 W; Case Connection: SOURCE; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation Ambient: 136 W; Maximum Drain Current (ID): 20 A; Maximum Drain Current (Abs) (ID): 20 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 3.5 A; Terminal Position: DUAL; Transistor Application: AMPLIFIER;

RF Power Field-Effect Transistors;

GS61008P-TR by Gan Systems is an N-channel RF FET for switching applications. It operates in enhancement mode with a max drain current of 90A. With GaN element material, it offers high frequency band performance suitable for very high frequency applications.

CGH40120F by Wolfspeed is an N-CHANNEL RF Power FET with 120V DS Breakdown Voltage. It operates in S BAND, ideal for AMPLIFIER applications. Featuring GALLIUM NITRIDE technology, it has a max temp of 150°C and can operate from -40 to 150°C.

RF Power Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Package Shape: RECTANGULAR; No. of Terminals: 4;

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Terminal Finish: TIN;

RF Power Field-Effect Transistors; Terminal Finish: TIN; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260;