M/a-com Technology Solutions - CA70-2

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 10 dB;

WIDE BAND LOW POWER; Minimum Operating Temperature: -40 Cel; Maximum Operating Frequency: 17000 MHz; Construction: COMPONENT; Gain: 19 dB; Maximum Operating Temperature: 85 Cel;

WIDE BAND LOW POWER; Terminal Finish: Tin/Lead (Sn/Pb); Construction: COMPONENT; Additional Features: HIGH RELIABILITY; Maximum Input Power (CW): 15 dBm; Maximum Operating Frequency: 8000 MHz;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Frequency: 0 MHz;

HMC902LP3E by Analog Devices is a wide band low power RF amplifier with 17 dB gain, operating from 5-10 GHz. It has a max input power of 10 dBm and operates on a 3.5V supply, making it suitable for various RF and microwave applications requiring high performance in a compact package.

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Construction: COMPONENT; Power Supplies (V): 28; Maximum Operating Frequency: 1990 MHz;

NXP Semiconductors' BGA2870,115 is a RF & Microwave Amplifier with 2.5V power supply, 6 terminals, and 18.5mA max supply current. It features a plastic/epoxy package body material and tin terminal finish, suitable for surface mount applications in various electronic devices.

NARROW BAND HIGH POWER;

Analog Devices' HMC797LP5E is a wide band medium power RF amplifier with 11 dB gain and 23 dBm CW input power. Operating from -55 to 85°C, it covers frequencies from 0 to 22 GHz. With a VSWR of 7, this GaAs component is ideal for RF and microwave applications requiring high performance in plastic/epoxy packages.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -40 Cel; Maximum Operating Frequency: 4000 MHz;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 11 dB;

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;

WIDE BAND LOW POWER; Construction: COMPONENT; Maximum Operating Frequency: 26500 MHz; Minimum Operating Frequency: 6000 MHz; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 0 dBm;

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: CERAMIC; Technology: PHEMT; Gain: 23 dB;

WIDE BAND MEDIUM POWER; Maximum Operating Frequency: 4000 MHz; Construction: COMPONENT; Minimum Operating Frequency: 400 MHz; JESD-609 Code: e4; Terminal Finish: NICKEL PALLADIUM GOLD;

WIDE BAND LOW POWER; Maximum Input Power (CW): 10 dBm; Minimum Operating Frequency: 500 MHz; Characteristic Impedance: 50 ohm; Maximum Operating Temperature: 85 Cel; Maximum Operating Frequency: 80000 MHz;

NXP Semiconductors' 935373852528 RF Amplifier operates in the 3200-4000 MHz range with a gain of 26.5 dB and can handle up to 28 dBm CW input power. This LDMOS component, with a VSWR of 10, is designed for narrowband high-power applications requiring a characteristic impedance of 50 ohms.

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 24 dBm; Minimum Operating Frequency: 0 MHz; Construction: COMPONENT; Gain: 19 dB;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Construction: COMPONENT; Characteristic Impedance: 50 ohm;