NXP Semiconductors - 935373852528

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Power Supplies (V): 3;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Terminal Finish: MATTE TIN;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: TO-243;

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Technology: GAN; No. of Functions: 1; Construction: COMPONENT;

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Terminal Finish: Matte Tin (Sn); Maximum Operating Temperature: 85 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; JESD-609 Code: e3;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Power Supplies (V): 3.3; Maximum Operating Temperature: 85 Cel;

Qorvo's SPF-5189Z is a GAAS RF amplifier with 11.3 dB gain, operating from 50 MHz to 4 GHz. It has a max input power of 27 dBm and operates on a 5V supply. Ideal for wideband medium-power applications, it features surface mounting and a plastic/epoxy package body.

Infineon's BGA715N7E6327XTSA2 is a RF amplifier with 20dB gain, operating from 1550-1615MHz. It can handle up to 10dBm input power and has a characteristic impedance of 50 ohm. Ideal for narrowband low-power applications in temperatures ranging from -40°C to 85°C.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Technology: PHEMT; Maximum Operating Frequency: 31000 MHz; Construction: COMPONENT;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; Gain: 9.5 dB;

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BICMOS; Screening Level: AEC-Q100;

Analog Devices' HMC564LC4TR is a wide band low power RF amplifier with 14 dB gain, operating from 7-14 GHz. It has a max input power of 20 dBm and operates on a 3V supply, drawing up to 75 mA. Ideal for RF and microwave applications requiring high frequency amplification in compact designs.

WIDE BAND MEDIUM POWER; Gain: 19.4 dB; Minimum Operating Frequency: 50 MHz; JESD-609 Code: e4; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 30 dBm;

WIDE BAND LOW POWER; Construction: COMPONENT; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 20 dBm; Minimum Operating Frequency: 10 MHz; Characteristic Impedance: 50 ohm;

XP1039-QJ-0G0T by M/a-com Technology Solutions is a wide band high power RF amplifier with 15.5 dB gain, operating from 5600 MHz to 7100 MHz. It can handle up to 25 dBm CW input power and operates in temperatures ranging from -40°C to 85°C. Ideal for applications requiring high power amplification in RF and microwave systems.

WIDE BAND MEDIUM POWER; Maximum Input Power (CW): 26 dBm; Construction: COMPONENT; Maximum Operating Frequency: 5000 MHz; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel;

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAN; Construction: COMPONENT;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Technology: GAAS; No. of Functions: 1;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; Maximum Input Power (CW): 18 dBm;