Agilent Technologies - ABA-54563-BLKG

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 85 mA;

WIDE BAND HIGH POWER; Maximum Operating Frequency: 8500 MHz; Minimum Operating Frequency: 5900 MHz; Maximum Input Power (CW): 29 dBm; Gain: 18 dB; Construction: COMPONENT;

Analog Devices' HMC636ST89TR is a GaAs RF amplifier with 5V power supply, operating from -40 to 85°C. It features wideband low power design in a surface-mount package, ideal for RF and microwave applications requiring high performance in compact setups.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 20 dBm;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Technology: HYBRID; No. of Functions: 1; Gain: 33 dB;

NARROW BAND LOW POWER;

Qorvo's QPA1019TR7 is a wide band high power RF amplifier with 30 dB gain, operating from 4.5 GHz to 7 GHz. It can handle up to 28 dBm CW input power and has gold terminal finish. Ideal for RF & microwave applications requiring high power amplification in temperatures ranging from -40°C to 85°C.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Construction: COMPONENT; Gain: 22 dB;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: CERAMIC; Technology: GAAS; Construction: COMPONENT;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;

WIDE BAND MEDIUM POWER; Construction: COMPONENT; Minimum Operating Temperature: -40 Cel; Minimum Operating Frequency: 2000 MHz; Maximum Operating Temperature: 85 Cel; Characteristic Impedance: 50 ohm;

WIDE BAND LOW POWER; Maximum Input Power (CW): 13 dBm; Maximum Voltage Standing Wave Ratio: 2.5; Minimum Operating Frequency: 1500 MHz; JESD-609 Code: e3; Characteristic Impedance: 50 ohm;

Qorvo's TQP7M9103 is a wide band medium power RF amplifier with 16.6 dB gain, operating from 400 MHz to 4000 MHz. It has a max input power of 30 dBm and VSWR of 10, suitable for surface mount applications in RF & microwave systems. With a compact plastic/epoxy package, it operates b/w -40°C to 85°C temperature range.

Analog Devices' HMC287MS8ETR is a GaAs RF amplifier with 3V supply, 15mA max current, and -40 to 85°C operating range. Ideal for narrowband low-power applications, it features a surface-mount package suitable for RF and microwave circuits.

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Construction: COMPONENT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Input Power (CW): 20 dBm;

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Construction: COMPONENT; Maximum Operating Frequency: 20000 MHz; JESD-609 Code: e4; Minimum Operating Frequency: 6000 MHz;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Maximum Operating Frequency: 2700 MHz; Maximum Supply Current: 52 mA;

WIDE BAND LOW POWER; Additional Features: LOW NOISE; Construction: COMPONENT; Maximum Operating Frequency: 6000 MHz; Characteristic Impedance: 50 ohm; Gain: 9.2 dB;