NXP Semiconductors - BGA2870,115

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: CERAMIC; Technology: BIPOLAR; No. of Functions: 1;

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Minimum Operating Frequency: 400 MHz; Maximum Operating Frequency: 470 MHz; Minimum Operating Temperature: -30 Cel;

WIDE BAND LOW POWER; Maximum Operating Frequency: 13500 MHz; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Gain: 10 dB; Maximum Input Power (CW): 15 dBm;

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Characteristic Impedance: 50 ohm;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Terminal Finish: Nickel/Gold (Ni/Au); Maximum Supply Current: 70 mA;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 13 dBm;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 28; Package Body Material: PLASTIC/EPOXY; Terminal Finish: Matte Tin (Sn); Minimum Operating Frequency: 30 MHz;

WIDE BAND HIGH POWER; Maximum Voltage Standing Wave Ratio: 10; Maximum Input Power (CW): 30 dBm; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 50 MHz; Construction: COMPONENT;

XP1035-QH-0G0T by M/a-com is a GAAS technology RF amplifier with 26 dB gain, operating from 5900 MHz to 9500 MHz. It has a max input power of 15 dBm and operates on a 6V power supply. Ideal for wide band medium power applications requiring surface mounting feature.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: CERAMIC; Technology: GAAS; Construction: COMPONENT;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; Minimum Operating Temperature: -40 Cel;

MAX2691EWS+T by Analog Devices is a BICMOS RF amplifier with 13.1 dB gain, operating at 1.8/3.3V. It is a wide band low power device suitable for surface mount applications in RF & Microwave systems, offering a characteristic impedance of 50 ohm and temperature range from -40 to 85°C.

WIDE BAND LOW POWER; Construction: COMPONENT; Minimum Operating Temperature: -55 Cel; Additional Features: I/P POWER-MAX (PEAK)=27DBM; Minimum Operating Frequency: 1000 MHz; Characteristic Impedance: 50 ohm;

WIDE BAND HIGH POWER; Construction: COMPONENT; Gain: 13.5 dB; Maximum Input Power (CW): 28 dBm; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 2700 MHz;

NARROW BAND LOW POWER; Terminal Finish: Matte Tin (Sn); Maximum Voltage Standing Wave Ratio: 2; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 4450 MHz; JESD-609 Code: e3;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; Maximum Supply Current: 95 mA;

NARROW BAND LOW POWER; Additional Features: LOW NOISE; Maximum Voltage Standing Wave Ratio: 2; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3; Maximum Operating Frequency: 8700 MHz;

HMC565LC5TR by Analog Devices is a wide band low power RF amplifier with 16 dB gain, operating from 6-20 GHz. It has a max input power of 10 dBm and operates on a 3V supply, drawing 75 mA. Ideal for RF and microwave applications requiring high frequency amplification in compact designs.

WIDE BAND MEDIUM POWER; Terminal Finish: Matte Tin (Sn); Construction: COMPONENT; Minimum Operating Temperature: -40 Cel; Maximum Input Power (CW): 24 dBm; JESD-609 Code: e3;

WIDE BAND LOW POWER; Gain: 10 dB; Maximum Operating Frequency: 18000 MHz; Terminal Finish: GOLD OVER NICKEL; Minimum Operating Temperature: -40 Cel; Construction: COMPONENT;