Infineon Technologies - SFH317-2

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Power Dissipation: .05 W; Infrared (IR) Range: YES; Maximum Dark Current: 25 nA; Maximum Operating Temperature: 125 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .33 W; Minimum Operating Temperature: -55 Cel; Peak Wavelength (nm): 880;

Photo Transistors; Mounting Feature: SURFACE MOUNT; Maximum Response Time: .000008 s; Maximum Operating Temperature: 125 Cel; Maximum Dark Current: 25 nA; Maximum Power Dissipation: .05 W;

PHOTO DARLINGTON; Minimum Operating Temperature: 0 Cel; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum Dark Current: 250 nA; Shape: ROUND; Maximum Operating Temperature: 70 Cel;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Maximum Power Dissipation: .1 W; Shape: ROUND; Size: 1.8 mm;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .00001 s; Maximum On State Current: .05 A; Minimum Operating Temperature: -55 Cel;

PT100MF0MP by Sharp Corporation is a 1.6mm round phototransistor with a peak wavelength of 910nm. It operates in temperatures ranging from -30°C to 85°C and has a min collector-emitter breakdown voltage of 35V. This phototransistor is commonly used for optoelectronic applications requiring infrared detection.

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; Maximum Response Time: .0000075 s; Minimum Operating Temperature: -55 Cel;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin (Sn); Additional Features: HIGH SENSITIVITY, DAY LIGHT FILTER; Shape: ROUND; No. of Functions: 1;

PHOTO TRANSISTOR; Terminal Finish: TIN; Minimum Collector-emitter Breakdown Voltage: 35 V; Maximum Operating Temperature: 100 Cel; Size: 2.4 mm; Shape: ROUND;

QSB363.ZR by Qt Optoelectronics is a 1.9mm ROUND PHOTO TRANSISTOR with max operating temp of 85°C and min of -40°C. It has 0.7mA light current, 100nA dark current, and 30V breakdown voltage. Ideal for applications requiring precise light sensing in compact spaces.

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Maximum Dark Current: 50 nA; Infrared (IR) Range: YES; Maximum Operating Temperature: 100 Cel; Minimum Collector-emitter Breakdown Voltage: 15 V;

PHOTO TRANSISTOR; Shape: ROUND; No. of Functions: 1; Infrared (IR) Range: YES; Configuration: SINGLE; Size: 3.1 mm;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Nominal Light Current: .65 mA; No. of Functions: 1; Peak Wavelength (nm): 860;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); No. of Functions: 1; Maximum Operating Temperature: 100 Cel; Peak Wavelength (nm): 860;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Maximum Response Time: .000007 s; Maximum On State Current: .015 A;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Shape: ROUND; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum Power Dissipation: .075 W; Peak Wavelength (nm): 870;

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -40 Cel; Maximum Dark Current: 3 nA; Maximum On State Current: .02 A;

PHOTO TRANSISTOR; Maximum Operating Temperature: 125 Cel; Maximum Dark Current: 100 nA; Nominal Light Current: 2 mA; No. of Functions: 12; Minimum Operating Temperature: -65 Cel;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Minimum Collector-emitter Breakdown Voltage: 50 V; Nominal Light Current: 2 mA; Maximum Response Time: .0000015 s; No. of Functions: 1;