Infineon Technologies - SFH3211-3

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 900; Maximum Response Time: .0000075 s; JESD-609 Code: e0;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; Minimum Operating Temperature: -55 Cel; Peak Wavelength (nm): 870;

QSE113 by Onsemi is a single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100°C, with max power dissipation of 0.1W. Ideal for IR applications due to its fast response time and collector-emitter breakdown voltage of 30V.

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 125 Cel; Maximum Power Dissipation: .125 W; Minimum Operating Temperature: -55 Cel; Maximum Response Time: .000015 s;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 125 Cel; Maximum Dark Current: 25 nA; Maximum Power Dissipation: .05 W; Configuration: SINGLE;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Additional Features: TTL COMPATIBLE; Configuration: SINGLE; Shape: ROUND; Infrared (IR) Range: YES;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 25 nA; Maximum Operating Temperature: 125 Cel; Nominal Light Current: 7 mA; No. of Functions: 1;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum On State Current: .015 A; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 100 Cel; Maximum Dark Current: 200 nA;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Maximum Dark Current: 50 nA; Infrared (IR) Range: YES; Maximum Operating Temperature: 100 Cel; Minimum Collector-emitter Breakdown Voltage: 15 V;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Maximum Power Dissipation: .1 W; Nominal Light Current: .25 mA; Infrared (IR) Range: YES;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Configuration: SINGLE; Size: 5 mm; Shape: RECTANGULAR;

PHOTO TRANSISTOR;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; Minimum Operating Temperature: -55 Cel; Maximum Dark Current: 200 nA;

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -25 Cel; Maximum Dark Current: 1000 nA; Maximum On State Current: .05 A; Maximum Operating Temperature: 100 Cel;

The Osram Opto Semiconductors SFH313FA-3/4 is a 5mm phototransistor with peak wavelength of 870nm. It operates b/w -40 to 100°C, with max power dissipation of 0.2W and response time of 0.000014s. Ideal for applications requiring fast light detection in IR range, such as optical sensors and proximity detectors.

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; No. of Functions: 1; Minimum Collector-emitter Breakdown Voltage: 30 V; Size: 3.1 mm;

PHOTO TRANSISTOR; Peak Wavelength (nm): 870; Size: 5 mm; Shape: ROUND; Maximum Dark Current: 200 nA; No. of Functions: 1;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Size: 1.52 mm; Minimum Operating Temperature: -65 Cel; Nominal Light Current: .6 mA; Peak Wavelength (nm): 890;

PHOTO TRANSISTOR; No. of Functions: 1; Shape: ROUND; Peak Wavelength (nm): 720; Configuration: SINGLE; Infrared (IR) Range: NO;

PHOTO DARLINGTON; Minimum Collector-emitter Breakdown Voltage: 30 V; Size: 1.5 mm; Minimum Operating Temperature: -25 Cel; Maximum Operating Temperature: 85 Cel; Infrared (IR) Range: YES;