Infineon Technologies - BP103B2

PHOTO TRANSISTOR; Minimum Operating Temperature: -25 Cel; Maximum Dark Current: 100 nA; Maximum Operating Temperature: 85 Cel; Nominal Light Current: .04 mA; No. of Functions: 1;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 850; JESD-609 Code: e0; Minimum Operating Temperature: -55 Cel;

KDT00030ATR by Onsemi is a phototransistor with peak wavelength of 630nm. It operates b/w -40°C to 85°C, with max dark current of 40nA. Ideal for surface mount applications in optoelectronics.

SDP8405-003 by Honeywell Sensing And Control is a PHOTO TRANSISTOR with a max operating temperature of 100°C and a min operating temperature of -40°C. It has a max power dissipation of 0.07W and a max dark current of 100nA. This through-hole mount optoelectronic component is suitable for various applications requiring fast response time.

PHOTO DARLINGTON; No. of Functions: 1; Maximum Dark Current: 250 nA; Size: 1.6 mm; Infrared (IR) Range: NO; Minimum Collector-emitter Breakdown Voltage: 30 V;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum On State Current: .015 A; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 100 Cel; Maximum Dark Current: 200 nA;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; No. of Functions: 1; Additional Features: HIGH SENSITIVITY; Nominal Light Current: .4 mA; Minimum Collector-emitter Breakdown Voltage: 40 V;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Configuration: SINGLE; Maximum Dark Current: 25 nA; Peak Wavelength (nm): 900; Minimum Operating Temperature: -60 Cel;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Nominal Light Current: .07 mA; No. of Functions: 1; Shape: ROUND; Maximum Power Dissipation: .075 W;

PHOTO TRANSISTOR; Nominal Light Current: 10 mA; Infrared (IR) Range: YES; Peak Wavelength (nm): 850; Configuration: SINGLE; Maximum Dark Current: 100 nA;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Collector-emitter Breakdown Voltage: 50 V; Maximum On State Current: .05 A; Minimum Operating Temperature: -40 Cel;

PHOTO TRANSISTOR; Size: 5 mm; Configuration: SINGLE; No. of Functions: 1; Maximum Operating Temperature: 100 Cel; Minimum Operating Temperature: -55 Cel;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 100 nA; Maximum Power Dissipation: .07 W; Maximum Operating Temperature: 100 Cel; Maximum Response Time: .000015 s;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -55 Cel; JESD-609 Code: e0; Maximum On State Current: .05 A;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 930; Configuration: SINGLE; Minimum Operating Temperature: -40 Cel; Infrared (IR) Range: YES;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Minimum Collector-emitter Breakdown Voltage: 50 V; Nominal Light Current: 2 mA; Maximum Response Time: .0000015 s; No. of Functions: 1;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Minimum Collector-emitter Breakdown Voltage: 35 V; Maximum On State Current: .015 A; Packing Method: TR, 13 INCH; Nominal Light Current: .65 mA;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin (Sn); Maximum Power Dissipation: .165 W; Additional Features: HIGH SENSITIVITY; No. of Functions: 1;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; Peak Wavelength (nm): 880; Maximum Response Time: .000008 s;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 100 Cel; JESD-609 Code: e0;