Infineon Technologies - BPY62-6

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 100 nA; Size: 1.5 mm; Additional Features: SIDE VIEW; Maximum On State Current: .05 A;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 100 Cel; JESD-609 Code: e0;

PHOTO TRANSISTOR; Shape: ROUND; Peak Wavelength (nm): 870; Minimum Operating Temperature: -20 Cel; Nominal Light Current: .024 mA; Maximum Dark Current: 100 nA;

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .075 W; Shape: ROUND; Infrared (IR) Range: YES;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Nominal Light Current: .65 mA; No. of Functions: 1; Peak Wavelength (nm): 860;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Peak Wavelength (nm): 630; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3;

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 840; Maximum Dark Current: 50 nA; Maximum On State Current: .02 A;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .015 A; Maximum Operating Temperature: 100 Cel; Maximum Dark Current: 200 nA;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin (Sn); Additional Features: HIGH SENSITIVITY; Maximum On State Current: .05 A; Shape: ROUND;

QSD123.A4R0 by Qt Optoelectronics is a 5mm round phototransistor with max operating temp of 100°C and min of -40°C. It has nominal light current of 4mA, dark current of 100nA, and IR range. Ideal for applications requiring reliable photo detection in various temperature conditions.

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Size: 3.1 mm; Peak Wavelength (nm): 900; Maximum Power Dissipation: .075 W; Configuration: SINGLE;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN; Maximum Power Dissipation: .1 W; JESD-609 Code: e3; Maximum Operating Temperature: 100 Cel;

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Peak Wavelength (nm): 850; Minimum Operating Temperature: -40 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Maximum Response Time: .00001 s; JESD-609 Code: e0;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 800; Minimum Operating Temperature: -20 Cel; Maximum Dark Current: 100 nA; Maximum Operating Temperature: 100 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Dark Current: 200 nA; Peak Wavelength (nm): 860;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum On State Current: .05 A; Additional Features: HIGH SENSITIVITY; Maximum Dark Current: 100 nA; Configuration: SINGLE;

QSB363 by Onsemi is a single configuration phototransistor with a size of 1.9 mm. It operates at temperatures ranging from -25 to 85 °C and has a peak wavelength of 940 nm. It is commonly used in applications requiring infrared sensing or detection.

QSE113 by Onsemi is a single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100°C, with max power dissipation of 0.1W. Ideal for IR applications due to its fast response time and collector-emitter breakdown voltage of 30V.

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .1 A; Minimum Operating Temperature: -40 Cel; Maximum Dark Current: 100 nA;