Osram Opto Semiconductors - LPT80A

PHOTO TRANSISTOR; Terminal Finish: TIN; Minimum Collector-emitter Breakdown Voltage: 35 V; Maximum Operating Temperature: 100 Cel; Size: 2.4 mm; Shape: ROUND;

PHOTO DARLINGTON; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Collector-emitter Breakdown Voltage: 25 V; Nominal Light Current: 4 mA; JESD-609 Code: e0; No. of Functions: 1;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 100 Cel; Minimum Operating Temperature: -40 Cel; Maximum Response Time: .00001 s; Maximum Power Dissipation: .06 W;

PHOTO TRANSISTOR; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -25 Cel; Maximum Dark Current: 100 nA; Configuration: SINGLE; No. of Functions: 1;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Maximum Response Time: .000008 s; Minimum Operating Temperature: -40 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .2 W; JESD-609 Code: e0; Maximum Operating Temperature: 100 Cel;

Vishay Intertechnology's VEMT3700-GS08 is a 2.4mm single phototransistor with peak wavelength of 850nm. Operating b/w -40°C to 100°C, it has a max power dissipation of 0.1W and min collector-emitter breakdown voltage of 70V. Ideal for surface mount applications in infrared range, it offers nominal light current of 0.5mA and max dark current of 200nA.

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Minimum Operating Temperature: -55 Cel; Maximum Power Dissipation: .165 W;

Vishay Intertechnology's VEMT2000X01 is a 1.8mm round phototransistor with peak wavelength of 860nm. It operates b/w -40°C to 100°C, with max power dissipation of 0.1W and on-state current of 0.05A. Ideal for IR applications due to its infrared range, it is surface mountable and has a min collector-emitter breakdown voltage of 20V.

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN SILVER; Nominal Light Current: 2.5 mA; Infrared (IR) Range: YES; No. of Functions: 1;

PHOTO TRANSISTOR; Peak Wavelength (nm): 870; Size: 5 mm; Shape: ROUND; Maximum Dark Current: 200 nA; No. of Functions: 1;

PHOTO TRANSISTOR; Terminal Finish: Matte Tin (Sn); No. of Functions: 1; Configuration: SINGLE; Size: 1.6 mm; JESD-609 Code: e3;

PHOTO TRANSISTOR; Terminal Finish: Matte Tin (Sn); Minimum Operating Temperature: -40 Cel; Shape: ROUND; Size: 1.6 mm; No. of Functions: 1;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Dark Current: 10 nA; Peak Wavelength (nm): 800;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Size: 3.1 mm; Peak Wavelength (nm): 900; Maximum Power Dissipation: .075 W; Configuration: SINGLE;

PHOTO TRANSISTOR; Terminal Finish: Tin/Lead (Sn/Pb); Nominal Light Current: .4 mA; Maximum Dark Current: 100 nA; Infrared (IR) Range: YES; JESD-609 Code: e0;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Operating Temperature: 125 Cel; Maximum On State Current: .05 A;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 75 Cel; No. of Functions: 1; Shape: ROUND; Infrared (IR) Range: YES;

SMD2440-011 by Honeywell Sensing And Control is a single configuration phototransistor with a peak wavelength of 880nm. It operates in temperatures ranging from -55 to 125 °C and has a max power dissipation of 0.125W. This surface mount device is commonly used for optoelectronic applications requiring infrared detection.

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Nominal Light Current: .075 mA; Maximum Operating Temperature: 85 Cel; Minimum Collector-emitter Breakdown Voltage: 6 V;