Telefunken Microelectronics - TEKT5400S-ASZ

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Configuration: SINGLE; Maximum Response Time: .000008 s; Peak Wavelength (nm): 900;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Power Dissipation: .05 W; Peak Wavelength (nm): 900; Maximum Operating Temperature: 125 Cel; Configuration: SINGLE;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 25 nA; Nominal Light Current: 8 mA; Maximum Power Dissipation: .05 W; Maximum Operating Temperature: 125 Cel;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .015 A; Maximum Dark Current: 200 nA; Minimum Operating Temperature: -40 Cel;

PHOTO TRANSISTOR; Maximum Operating Temperature: 85 Cel; Size: 3.1 mm; Shape: ROUND; Minimum Collector-emitter Breakdown Voltage: 30 V; Configuration: SINGLE;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Infrared (IR) Range: YES; Size: 2 mm; Minimum Collector-emitter Breakdown Voltage: 30 V; Shape: RECTANGULAR;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; No. of Functions: 1; Maximum Dark Current: 100 nA; Maximum Power Dissipation: .1 W; Maximum Operating Temperature: 85 Cel;

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .165 W; Maximum On State Current: .015 A; Peak Wavelength (nm): 950;

SDP8405-003 by Honeywell Sensing And Control is a PHOTO TRANSISTOR with a max operating temperature of 100°C and a min operating temperature of -40°C. It has a max power dissipation of 0.07W and a max dark current of 100nA. This through-hole mount optoelectronic component is suitable for various applications requiring fast response time.

Photo Transistors; Mounting Feature: SURFACE MOUNT; Peak Wavelength (nm): 860; Maximum Dark Current: 200 nA; Maximum On State Current: .015 A; Maximum Response Time: .000005 s;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 125 Cel; Maximum Response Time: .000008 s; Minimum Operating Temperature: -60 Cel; Maximum Power Dissipation: .05 W;

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 570; Maximum Operating Temperature: 100 Cel; Maximum On State Current: .02 A;

QSB363GR by Onsemi is a single phototransistor with peak wavelength of 940nm. It operates b/w -25°C to 85°C, with max power dissipation of 0.075W. Ideal for IR applications due to its min collector-emitter breakdown voltage of 30V and nominal light current of 1.5mA.

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Minimum Operating Temperature: -55 Cel; Maximum On State Current: .05 A;

PHOTO TRANSISTOR; Nominal Light Current: .2 mA; Maximum Operating Temperature: 85 Cel; Configuration: SINGLE; Minimum Operating Temperature: -30 Cel; Maximum Dark Current: 100 nA;

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Peak Wavelength (nm): 860; Maximum Response Time: .000008 s;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Shape: ROUND; Maximum Operating Temperature: 125 Cel; Minimum Operating Temperature: -65 Cel; Size: 1.52 mm;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 900; Maximum Response Time: .000015 s; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 100 Cel;

PHOTO DARLINGTON; Shape: ROUND; Additional Features: HIGH SENSITIVITY; Configuration: SINGLE; Minimum Collector-emitter Breakdown Voltage: 30 V; Nominal Light Current: .2 mA;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 125 Cel; Maximum Response Time: .000022 s;