Small Signal Field Effect Transistors (FET)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
FDV305N	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.35 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.9 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.22 ohm	.9 A	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
2N7002K-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.35 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.3 A	3	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	2 ohm	.3 A	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY		e3	30	260	5 pF
BSS139H6327XTSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		250 V	GULL WING	RECTANGULAR	DEPLETION MODE	1		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		TIN	30 ohm	.1 A	DUAL	R-PDSO-G3	1		Not Qualified			e3			3.3 pF
2N7002KW	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.3 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.31 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Matte Tin (Sn) - annealed	1.6 ohm	.31 A	DUAL	R-PDSO-G3	1		Not Qualified	LOW THRESHOLD		e3	NOT SPECIFIED	NOT SPECIFIED	5 pF
BSS84AKM,315	NXP Semiconductors	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.7 W	PLASTIC/EPOXY	SWITCHING	50 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	.23 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN	8.5 ohm	.23 A	BOTTOM	R-PBCC-N3	1	DRAIN		LOGIC LEVEL COMPATIBLE		e3	30	260		AEC-Q101; IEC-60134
NTS4001NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	.33 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.27 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	2 ohm	.27 A	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260	12 pF
FDC5614P_NL	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.105 ohm	3 A	DUAL	R-PDSO-G6	1		Not Qualified			e3
FDS4935BZ	Onsemi	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	6.9 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.022 ohm	6.9 A	DUAL	R-PDSO-G8	1		Not Qualified	ESD PROTECTION		e3	30	260
NDS331N	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.3 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.16 ohm	1.3 A	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
FDC5614PD87Z	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.1 ohm	3 A	DUAL	R-PDSO-G6			Not Qualified
2N7002ET1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.3 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.26 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	2.5 ohm	.26 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	40	260
FDN337N_NL	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	2 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.065 ohm	2.2 A	DUAL	R-PDSO-G3	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3
BSS84AKS,115	NXP Semiconductors	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.99 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	.16 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Tin (Sn)	8.5 ohm	.16 A	DUAL	R-PDSO-G6	1			LOGIC LEVEL COMPATIBLE		e3	30	260		AEC-Q101; IEC-60134
FDN352AP	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.3 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN	.18 ohm	1.3 A	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
MMBF170-7-F	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	.3 W	150 Cel	SILICON	-55 Cel	MATTE TIN	5 ohm	.5 A	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY		e3	30	260	5 pF	AEC-Q101
L2N7002LT1G	Leshan Radio	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.3 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.075 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			7.5 ohm	.115 A	DUAL	R-PDSO-G3					TO-236AB		NOT SPECIFIED	NOT SPECIFIED	5 pF
BVSS123LT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.225 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.17 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	6 ohm	.17 A	DUAL	R-PDSO-G3	1				TO-236	e3	NOT SPECIFIED	260		AEC-Q101
FDN5630	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.7 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.1 ohm	1.7 A	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
BSS138LT1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.2 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	Tin/Lead (Sn/Pb)	3.5 ohm	.2 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e0	30	235	5 pF
FDV304PD87Z	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.35 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.46 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	1.1 ohm	.46 A	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
NTR5198NLT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	2.2 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Matte Tin (Sn) - annealed	.205 ohm	2.2 A	DUAL	R-PDSO-G3	1					e3	NOT SPECIFIED	260
DMG1012T-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.28 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.63 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.4 ohm	.63 A	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260	5.37 pF
FDV304P_NL	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.35 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.46 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	1.1 ohm	.46 A	DUAL	R-PDSO-G3	1		Not Qualified			e3
FDV304P-F169	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.35 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	.35 W	150 Cel	SILICON	-55 Cel		1.1 ohm	.46 A	DUAL	R-PDSO-G3	1				TO-236		30	260	10 pF
IRLML5103TRPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.28 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.54 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.6 ohm	.76 A	DUAL	R-PDSO-G3	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260
2N7002BK,215	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	TIN	1.6 ohm	.35 A	DUAL	R-PDSO-G3	1			LOGIC LEVEL COMPATIBLE	TO-236AB	e3	30	260		AEC-Q101
NDS0605	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.36 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.18 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	5 ohm	.18 A	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260	5 pF
FDV301N-NB9V005	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.35 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.5 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	4 ohm	.22 A	DUAL	R-PDSO-G3	1					e3	30	260
NDS355AN	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.7 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.085 ohm	1.7 A	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
2N7002K	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	TIN LEAD	2 ohm	.3 A	DUAL	R-PDSO-G3			Not Qualified		TO-236	e0
FDV301ND87Z	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			4 ohm	.22 A	DUAL	R-PDSO-G3			Not Qualified	LOGIC LEVEL COMPATIBLE
FDV301N_NL	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.35 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.22 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	5 ohm	.22 A	DUAL	R-PDSO-G3	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260
FDV301N-F169	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON	-55 Cel	Matte Tin (Sn) - annealed	4 ohm	.22 A	DUAL	R-PDSO-G3	1					e3	30	260
BSS8402DW-7-F	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	.13 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	7.5 ohm	.115 A	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260	5 pF
2N7002W-7-F	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.115 A	3	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	7.5 ohm	.115 A	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260	5 pF
NDS351AN	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.2 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.16 ohm	1.4 A	DUAL	R-PDSO-G3	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260
BSR302NL6327HTSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN	.023 ohm	3.7 A	DUAL	R-PDSO-G3	1		Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3			43 pF
NDC7002N	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.96 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	.51 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.4 W	150 Cel	SILICON	-55 Cel	MATTE TIN	2 ohm	.51 A	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260	5 pF
BS170FTA	Diodes Incorporated	N-CHANNEL	SINGLE	YES	.33 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.00015 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	5 ohm	.15 A	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
BS170	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	.83 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	ROUND	ENHANCEMENT MODE	1	.5 A	3	CYLINDRICAL	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	5 ohm	.3 A	BOTTOM	O-PBCY-T3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-92	e0			10 pF
BSS138W	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.34 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.21 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	.34 W	150 Cel	SILICON	-55 Cel	Tin (Sn)	6 ohm	.21 A	DUAL	R-PDSO-G3	1		Not Qualified	ULTRA-LOW RESISTANCE		e3	NOT SPECIFIED	NOT SPECIFIED	3.5 pF
SI2371EDS-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.045 ohm	4.8 A	DUAL	R-PDSO-G3	1				TO-236AB	e3
BSS138L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	10 ohm	.2 A	DUAL	R-PDSO-G3	1				TO-236AB	e3	30	260	5 pF
FDC6420C	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.7 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	2.2 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.07 ohm	3 A	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
FDN338P	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.6 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Tin (Sn)	.115 ohm	1.6 A	DUAL	R-PDSO-G3	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3	NOT SPECIFIED	NOT SPECIFIED
FDV303N_NL	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.35 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.68 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.45 ohm	.68 A	DUAL	R-PDSO-G3	1		Not Qualified			e3
FDN358P	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.5 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN	.125 ohm	1.5 A	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
FDV303N-F169	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.35 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	.35 W	150 Cel	SILICON	-55 Cel		.45 ohm	.68 A	DUAL	R-PDSO-G3	1						30	260

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.