Small Signal Field Effect Transistors (FET)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
DMN65D8L-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		MATTE TIN	4 ohm	.27 A	DUAL	R-PDSO-G3	1			HIGH RELIABILITY		e3	30	260		AEC-Q101
BVSS84LT1G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.225 W	PLASTIC/EPOXY		50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		.13 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	10 ohm	.13 A	DUAL	R-PDSO-G3	1				TO-236	e3	10	260		AEC-Q101
SI2302CDS-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.86 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		2.6 A	3	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Matte Tin (Sn)	.057 ohm	2.6 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3
FDN304P_NL	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		2.4 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.052 ohm	2.4 A	DUAL	R-PDSO-G3	1		Not Qualified			e3
FDN304PZ	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		2.4 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Matte Tin (Sn) - annealed	.052 ohm	2.4 A	DUAL	R-PDSO-G3	1		Not Qualified			e3	NOT SPECIFIED	NOT SPECIFIED
2N7002KT7G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	1.6 ohm	.32 A	DUAL	R-PDSO-G3	1				TO-236	e3	NOT SPECIFIED	NOT SPECIFIED	5 pF
NDC7001C	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.96 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2		.51 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	2 ohm	.51 A	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
FDS9431A	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		3.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.22 ohm	3.5 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
BSS138PS	NXP Semiconductors	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		PURE TIN	1.6 ohm	.32 A	DUAL	R-PDSO-G6	1		Not Qualified	LOGIC LEVEL COMPATIBLE
BSS84P-E6327	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.36 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		.17 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			8 ohm	.17 A	DUAL	R-PDSO-G3	1		Not Qualified	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED			40	260	3 pF
BSS138NL6327	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.36 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		.23 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	.36 W	150 Cel	SILICON	-55 Cel	Matte Tin (Sn)	3.5 ohm	.23 A	DUAL	R-PDSO-G3	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3	40	260	3.8 pF	AEC-Q101; IEC-61249-2-21
2N7000G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	.35 W	PLASTIC/EPOXY		60 V	THROUGH-HOLE	ROUND	ENHANCEMENT MODE	1		.2 A	3	CYLINDRICAL	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	5 ohm	.2 A	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e1	40	260	5 pF
2N7000-G	Microchip Technology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	ROUND	ENHANCEMENT MODE	1			3	CYLINDRICAL	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	5 ohm	.2 A	BOTTOM	O-PBCY-T3			Not Qualified	HIGH INPUT IMPEDANCE	TO-92	e3			5 pF
FDG6332C	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.3 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2		.6 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.3 ohm	.7 A	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
NTR4003NT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.83 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		.5 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	2 ohm	.5 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	30	260
2N7000_D26Z	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	.4 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	ROUND	ENHANCEMENT MODE	1			3	CYLINDRICAL		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	TIN SILVER COPPER	5 ohm	.2 A	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e1			5 pF
2N7000-D26Z	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	.4 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	ROUND	ENHANCEMENT MODE	1		.2 A	3	CYLINDRICAL	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	5 ohm	.2 A	BOTTOM	O-PBCY-T3			Not Qualified		TO-92	e3			5 pF
2N7000/D26Z	National Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	.4 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	ROUND	ENHANCEMENT MODE	1			3	CYLINDRICAL		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		5 ohm	.2 A	BOTTOM	O-PBCY-T3			Not Qualified		TO-92				5 pF
SI2318CDS-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.1 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.042 ohm	5.6 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3			30 pF
SI2308BDS-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.66 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		2.3 A	3	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.156 ohm	1.9 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
NDS351AN_NL	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		1.2 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.16 ohm	1.4 A	DUAL	R-PDSO-G3	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3
BSS138NE7854	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.36 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	.36 W	150 Cel	SILICON	-55 Cel		3.5 ohm	.23 A	DUAL	R-PDSO-G3				LOGIC LEVEL COMPATIBLE			NOT SPECIFIED	NOT SPECIFIED	3.8 pF	MIL-STD-883
ZXMS6004FFTA	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		MATTE TIN	.6 ohm		DUAL	R-PDSO-F3	1			HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE		e3	30	260		AEC-Q101
FDMA1032CZ	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2		3.7 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Nickel/Palladium/Gold (Ni/Pd/Au)	.068 ohm	3.7 A	DUAL	S-PDSO-N6	1	DRAIN	Not Qualified	ESD PROTECTION	MO-229	e4	NOT SPECIFIED	NOT SPECIFIED
SI4401DDY-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	6.3 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		16.1 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Matte Tin (Sn)	.015 ohm	16.1 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
2N7002PW,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	.83 W							1		.31 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel		-55 Cel	TIN		.31 A			1					e3	30	260
BSS138-G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.36 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	6 ohm	.22 A	DUAL	R-PDSO-G3	1					e3	30	260	6 pF
BSS138G	Changzhou Galaxy Century Microelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.36 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	6 ohm	.22 A	DUAL	R-PDSO-G3	1					e3	30	260	6 pF
2N7002DWG	Changzhou Galaxy Century Microelectronics
BSS138NE6433	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.36 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		.23 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	.36 W	150 Cel	SILICON	-55 Cel		3.5 ohm	.23 A	DUAL	R-PDSO-G3	1		Not Qualified	LOGIC LEVEL COMPATIBLE				260	3.8 pF	MIL-STD-883
FDS4685	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		8.2 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.027 ohm	8.2 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
2N7000BU	Onsemi	N-CHANNEL	SINGLE	NO	.4 W							1		.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			TIN		.2 A								e3
IRLML6244TRPBF	Infineon Technologies												32 A	6.3 A			FET General Purpose Power						MATTE TIN					1		Not Qualified			e3	30	260
MMBF170LT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.225 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		.5 A	3	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	Tin (Sn)	5 ohm	.5 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	40	260
IRLHS6376TRPBF	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	6.6 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2		3.4 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.082 ohm	3.6 A	DUAL	S-PDSO-N6	1	DRAIN	Not Qualified			e3	30	260
2N7002EQ-7-F	Diodes Incorporated
FDC6305N	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.96 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2		2.7 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.08 ohm	2.7 A	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
2N7002DWQ-13-F	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.4 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2		.23 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	7.5 ohm	.23 A	DUAL	R-PDSO-G6	1			HIGH RELIABILITY		e3	30	260	5 pF	AEC-Q101
NX2301P,215	NXP Semiconductors	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		TIN	.19 ohm		DUAL	R-PDSO-G3	1				TO-236AB	e3	30	260		AEC-Q101
FDN302P	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		2.4 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	.055 ohm	2.4 A	DUAL	R-PDSO-G3	1		Not Qualified			e3	NOT SPECIFIED	NOT SPECIFIED
2N7002DWS-7	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.37 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	4 ohm	.247 A	DUAL	R-PDSO-G6						e3		260	2.6 pF	MIL-STD-202
IRF9310TRPBF-1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON			.0046 ohm	20 A	DUAL	R-PDSO-G8	1				MS-012AA
BVSS138LT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.225 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		.2 A	3	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	3.5 ohm	.2 A	DUAL	R-PDSO-G3	1				TO-236	e3	NOT SPECIFIED	NOT SPECIFIED	5 pF	AEC-Q101
MMBF170LT3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.225 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		.5 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	TIN LEAD	5 ohm	.5 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e0		235
2N7002BKS,115	NXP Semiconductors	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	TIN	1.6 ohm	.3 A	DUAL	R-PDSO-G6	1			LOGIC LEVEL COMPATIBLE		e3	30	260		AEC-Q101
MMBF170Q-7-F	Diodes Incorporated																						MATTE TIN										e3		260
SI2356DS-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.051 ohm	4.3 A	DUAL	R-PDSO-G3	1				TO-236AB	e3	30	260	17 pF
BSS123LT1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.225 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		.17 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	Tin/Lead (Sn/Pb)	6 ohm	.17 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e0	30	235

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.