Small Signal Field Effect Transistors (FET)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
BSS169H6327XTSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.36 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	DEPLETION MODE	1	.17 A	3	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN	6 ohm	.17 A	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260	7 pF
IRFL9110TRPBF	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3.1 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.1 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	2 W	150 Cel	SILICON	-55 Cel	MATTE TIN	1.2 ohm	1.1 A	SINGLE	R-PSSO-G3	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-261AA	e3	10	260	18 pF
FDG6303N	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.3 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2		6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.45 ohm	.5 A	DUAL	R-PDSO-G6	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260
LBSS84LT1G	Leshan Radio	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.225 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.13 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			10 ohm	.13 A	DUAL	R-PDSO-G3							NOT SPECIFIED	NOT SPECIFIED
MMBFJ177LT1G	Onsemi	P-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	CHOPPER		GULL WING	RECTANGULAR	DEPLETION MODE	1		3	SMALL OUTLINE	FET General Purpose Small Signal	JUNCTION		150 Cel	SILICON		Matte Tin (Sn) - annealed	300 ohm		DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	40	260	5.5 pF
NUD3124DMT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	YES		PLASTIC/EPOXY	SWITCHING	28 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Matte Tin (Sn) - annealed	1.4 ohm	.15 A	DUAL	R-PDSO-G6	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3	40	260
2N7002DW	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	.115 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	7.5 ohm	.115 A	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260	7 pF
2N7002BKV,115	NXP Semiconductors	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.14 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	.34 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	TIN	1.6 ohm	.34 A	DUAL	R-PDSO-F6	1			LOGIC LEVEL COMPATIBLE		e3	30	260		AEC-Q101
MMBFJ201	Onsemi	N-CHANNEL	SINGLE	YES	.35 W	PLASTIC/EPOXY	AMPLIFIER		GULL WING	RECTANGULAR	DEPLETION MODE	1		3	SMALL OUTLINE	Other Transistors	JUNCTION	.35 W	150 Cel	SILICON		TIN			DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
BSS123WQ-7-F	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.2 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.17 A	3	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	.2 W	150 Cel	SILICON	-55 Cel	MATTE TIN	6 ohm	.17 A	DUAL	R-PDSO-G3	1					e3	30	260	6 pF	AEC-Q101
2N7002,235	Nexperia	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-65 Cel	TIN	5 ohm	.3 A	DUAL	R-PDSO-G3	1				TO-236AB	e3	30	260	10 pF	IEC-60134
BSS209PWH6327XTSA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		TIN	.55 ohm	.63 A	DUAL	R-PDSO-G3	1			LOGIC LEVEL COMPATIBLE, AVALANCHE RATED		e3			45 pF
FDC6561AN	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.96 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	2.5 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	TIN	.095 ohm	2.5 A	DUAL	R-PDSO-G6	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260
BSS138NH6433	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.36 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.23 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	.36 W	150 Cel	SILICON	-55 Cel	MATTE TIN	3.5 ohm	.23 A	DUAL	R-PDSO-G3	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260	3.8 pF	AEC-Q101; IEC-61249-2-21
SN7002NH6327XTSA2	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		TIN	5 ohm	.2 A	DUAL	R-PDSO-G3	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3			4.2 pF
2N7002P,215	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.42 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.36 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	Tin (Sn)	1.6 ohm	.36 A	DUAL	R-PDSO-G3	1			LOGIC LEVEL COMPATIBLE	TO-236AB	e3	30	260		AEC-Q101
STN3NF06L	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.12 ohm	4 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	LOW THRESHOLD		e3		210
NDS9407	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	-55 Cel	MATTE TIN	.15 ohm	3 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
MGSF1N03LT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.42 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.6 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.1 ohm	1.6 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	30	260
FDY3000NZ	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.625 W	PLASTIC/EPOXY	SWITCHING	20 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	.6 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.7 ohm	.6 A	DUAL	R-PDSO-F6	1		Not Qualified	ESD PROTECTION		e3	30	260
NTS2101PT1G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.96 W	PLASTIC/EPOXY	SWITCHING	8 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3.7 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.1 ohm	1.4 A	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260
BSS308PEH6327XTSA1/SAMPLE	Infineon Technologies
TN2404K-T1-E3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.36 W	PLASTIC/EPOXY	SWITCHING	240 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.2 A	3	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	.36 W	150 Cel	SILICON	-55 Cel	MATTE TIN	4 ohm	.2 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
IRFHS9351TRPBF	Infineon Technologies	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	5.1 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.17 ohm	2.3 A	DUAL	S-PDSO-N6	1		Not Qualified	HIGH RELIABILITY		e3	30	260
BSS138_NL	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.36 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.2 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	6 ohm	.22 A	DUAL	R-PDSO-G3	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260	10 pF
FDN360P_NL	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	2 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.08 ohm	2 A	DUAL	R-PDSO-G3	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3
NTR4003NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.83 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.5 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	2 ohm	.5 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	30	260
BSS138WH6433XTMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	.5 W	150 Cel	SILICON	-55 Cel	MATTE TIN	3.5 ohm	.28 A	DUAL	R-PDSO-G3	1					e3	30	260	4.2 pF	AEC-Q101
BSS84PH6433	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.36 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.17 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	8 ohm	.17 A	DUAL	R-PDSO-G3	1			LOGIC LEVEL COMPATIBLE, AVALANCHE RATED		e3			3 pF	AEC-Q101
FDN340P_NL	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	2 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	.5 W	150 Cel	SILICON	-55 Cel	MATTE TIN	70 ohm	2 A	DUAL	R-PDSO-G3	1		Not Qualified			e3			56 pF
BSS670S2LH6327XTSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		TIN	.825 ohm	.54 A	DUAL	R-PDSO-G3	1		Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3	40	260	10 pF
FDMQ8205A	Onsemi	N-CHANNEL AND P-CHANNEL	COMPLEX	YES		PLASTIC/EPOXY	SWITCHING		NO LEAD	RECTANGULAR	ENHANCEMENT MODE	4		12	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		NICKEL PALLADIUM GOLD SILVER	.051 ohm	1.7 A	DUAL	R-PDSO-N12	1					e4	30	260
BSS138LT7G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	3.5 ohm	.2 A	DUAL	R-PDSO-G3	1				TO-236	e3	NOT SPECIFIED	NOT SPECIFIED	5 pF
2N7002DW-TP	Micro Commercial Components	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.2 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	.115 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	3 ohm	.34 A	DUAL	R-PDSO-G6	1		Not Qualified			e3	10	260	5 pF
BSS138LT3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.2 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	Tin/Lead (Sn80Pb20)	3.5 ohm	.2 A	DUAL	R-PDSO-G3			Not Qualified		TO-236AB	e0	30	235	5 pF
NUD3124LT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES		PLASTIC/EPOXY	SWITCHING	28 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Matte Tin (Sn) - annealed	1.4 ohm	.15 A	DUAL	R-PDSO-G3	1		Not Qualified	LOGIC LEVEL COMPATIBLE	TO-236AB	e3	40	260
2N7002DWQ-7-F	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.4 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	.23 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	7.5 ohm	.23 A	DUAL	R-PDSO-G6	1			HIGH RELIABILITY		e3	30	260	5 pF	AEC-Q101
DMN6140L-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON		MATTE TIN	.14 ohm	1.6 A	DUAL	R-PDSO-G3	1			HIGH RELIABILITY		e3	30	260		AEC-Q101
BSS84PWH6327	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.3 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.15 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	TIN	8 ohm	.15 A	DUAL	R-PDSO-G3	1			AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3	30	260	3.8 pF
BSS138NE6327	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.36 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.23 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	.36 W	150 Cel	SILICON	-55 Cel	Matte Tin (Sn)	3.5 ohm	.23 A	DUAL	R-PDSO-G3	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3	40	260	3.8 pF	MIL-STD-883
BSS84PWL6327XT	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON			8 ohm	.15 A	DUAL	R-PDSO-G3				AVALANCHE RATED, LOGIC LEVEL COMPATIBLE			NOT SPECIFIED	NOT SPECIFIED	3.8 pF
FDC6333C	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.96 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	2.5 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.095 ohm	2.5 A	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
2N7000TA	Onsemi	N-CHANNEL	SINGLE	NO	.4 W							1	.2 A		CYLINDRICAL	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			MATTE TIN	5 ohm	.2 A								e3
2N7000-TA	Vishay Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	60 V	WIRE	ROUND	ENHANCEMENT MODE	1		3	CYLINDRICAL		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			5 ohm	.3 A	BOTTOM	O-PBCY-W3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-226AA
MMBF170LT1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.225 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.5 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	Tin/Lead (Sn/Pb)	5 ohm	.5 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e0	30	235
BSS84PWL6327	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.3 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	.15 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Matte Tin (Sn)	8 ohm	.15 A	DUAL	R-PDSO-G3	1		Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3	40	260	3.8 pF
BSS84PL6327	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		8 ohm	.17 A	DUAL	R-PDSO-G3	1		Not Qualified	LOGIC LEVEL COMPATIBLE				260	3 pF
SI2300DS-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3.6 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	Matte Tin (Sn)	.068 ohm	3.6 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3			19 pF

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.