Broadcom - ATF-50189-TR1

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Terminal Finish: MATTE TIN; Package Style (Meter): SMALL OUTLINE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON; Operating Mode: DEPLETION MODE;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 7 V; Transistor Application: AMPLIFIER; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: DEPLETION MODE; Field Effect Transistor Technology: JUNCTION; Maximum Feedback Capacitance (Crss): .4 pF;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: LOW NOISE; Operating Mode: DUAL GATE, DEPLETION MODE; Minimum DS Breakdown Voltage: 12 V;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Transistor Application: AMPLIFIER; Terminal Position: DUAL; Reference Standard: IEC-60134;

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Package Style (Meter): CYLINDRICAL; No. of Terminals: 3; Qualification: Not Qualified;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Operating Mode: DUAL GATE, ENHANCEMENT MODE; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: AMPLIFIER;

The Onsemi 2SK544D is an N-CHANNEL RF FET with a max drain current of 0.03A, operating in DEPLETION MODE for AMPLIFIER applications. It features a METAL-OXIDE SEMICONDUCTOR technology and operates in the VERY HIGH FREQUENCY BAND, making it suitable for high-frequency signal amplification in various electronic devices.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Case Connection: SOURCE; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY; Terminal Position: DUAL;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Transistor Application: AMPLIFIER; Package Shape: ROUND;

BF2030WH6814XTSA1 by Infineon Technologies is a N-CHANNEL RF Small Signal FET with PLASTIC/EPOXY package. It operates in DUAL GATE, DEPLETION MODE and has ULTRA HIGH FREQUENCY BAND. This transistor is commonly used as an AMPLIFIER in various applications.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: AMPLIFIER; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JESD-609 Code: e0; Maximum Drain Current (ID): .1 A; No. of Terminals: 3;

RF Small Signal Field-Effect Transistors; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Package Shape: RECTANGULAR; JESD-30 Code: R-CDFM-F2;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; JESD-30 Code: O-PBCY-T3; JESD-609 Code: e3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;