Onsemi EEPROM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish I2C Control Byte Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

CAT25010YI-GT3D

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

128 words

5

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.65 mm

85 Cel

128X8

128

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

5.5 V

1.2 mm

1000000 Write/Erase Cycles

10 MHz

3 mm

Not Qualified

5 ms

SPI

1024 bit

2.5 V

e4

30

260

.000002 Amp

4.4 mm

CAT25160VE-GT3

Onsemi

EEPROM

AUTOMOTIVE

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

2048 words

5

2/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

100

1.27 mm

125 Cel

2KX8

2K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

5 MHz

3.9 mm

Not Qualified

5 ms

SPI

16384 bit

1.8 V

100 YEAR DATA RETENTION

e4

30

260

.000002 Amp

4.9 mm

CAT28C16ALI-12

Onsemi

EEPROM

INDUSTRIAL

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

35 mA

2048 words

5

5

8

IN-LINE

DIP24,.6

EEPROMs

100

2.54 mm

85 Cel

2KX8

2K

-40 Cel

NO

Tin (Sn)

DUAL

R-PDIP-T24

5.5 V

6.35 mm

100000 Write/Erase Cycles

15.24 mm

Not Qualified

5 ms

16384 bit

4.5 V

e3

.0001 Amp

31.875 mm

120 ns

5

YES

CAT28C16AW-20T

Onsemi

EEPROM

COMMERCIAL

24

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

2048 words

5

5

8

SMALL OUTLINE

SOP24,.4

EEPROMs

100

1.27 mm

70 Cel

2KX8

2K

0 Cel

NO

TIN

DUAL

R-PDSO-G24

1

5.5 V

2.65 mm

10000 Write/Erase Cycles

7.5 mm

Not Qualified

10 ms

16384 bit

4.5 V

e3

30

260

.0001 Amp

15.4 mm

200 ns

5

YES

CAT28C16AWI90

Onsemi

EEPROM

INDUSTRIAL

24

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

2048 words

5

5

8

SMALL OUTLINE

SOP24,.4

EEPROMs

100

1.27 mm

85 Cel

2KX8

2K

-40 Cel

NO

DUAL

R-PDSO-G24

5.5 V

2.65 mm

100000 Write/Erase Cycles

7.5 mm

Not Qualified

5 ms

16384 bit

4.5 V

NOT SPECIFIED

260

.0001 Amp

15.4 mm

90 ns

5

YES

CAT28C256T13I15

Onsemi

EEPROM

INDUSTRIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

32768 words

5

YES

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

EEPROMs

.55 mm

85 Cel

32KX8

32K

-40 Cel

NO

TIN LEAD

DUAL

R-PDSO-G28

2

5.5 V

1.2 mm

100000 Write/Erase Cycles

8 mm

Not Qualified

5 ms

262144 bit

4.5 V

64

e0

.00015 Amp

11.8 mm

150 ns

5

YES

CAT28C64BH13I12

Onsemi

EEPROM

INDUSTRIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

8192 words

5

YES

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

EEPROMs

.55 mm

85 Cel

8KX8

8K

-40 Cel

NO

Matte Tin (Sn)

DUAL

R-PDSO-G28

5.5 V

1.2 mm

100000 Write/Erase Cycles

8 mm

Not Qualified

5 ms

65536 bit

4.5 V

32

e3

.0001 Amp

11.8 mm

120 ns

5

YES

CAT34C02YI-GT5A

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

16 words

5

1.8/5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.65 mm

85 Cel

NO

16X16

16

-40 Cel

NICKEL PALLADIUM GOLD

1010DDDR

YES

DUAL

1

HARDWARE/SOFTWARE

R-PDSO-G8

1

5.5 V

1.2 mm

1000000 Write/Erase Cycles

.4 MHz

3 mm

Not Qualified

5 ms

I2C

256 bit

1.7 V

100 YEAR DATA RETENTION

16

e4

30

260

.000001 Amp

4.4 mm

CAT93C46VI

Onsemi

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

1 mA

64 words

2/5

16

SMALL OUTLINE

SOP8,.25

8

EEPROMs

100

1.27 mm

85 Cel

64X16

64

-40 Cel

TIN

DUAL

SOFTWARE

R-PDSO-G8

1

1000000 Write/Erase Cycles

Not Qualified

MICROWIRE

1024 bit

e3

260

.000001 Amp

CAT93C46VI-GT3

Onsemi

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

1 mA

64 words

5

2/5

16

SMALL OUTLINE

SOP8,.25

8

EEPROMs

100

1.27 mm

85 Cel

64X16

64

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

SOFTWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

2 MHz

3.9 mm

Not Qualified

1 ms

MICROWIRE

1024 bit

1.8 V

100 YEAR DATA RETENTION

e4

30

260

.000001 Amp

4.9 mm

CAV25080VE-GT3

Onsemi

EEPROM

AUTOMOTIVE

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

1024 words

5

8

SMALL OUTLINE

SOP8,.25

100

1.27 mm

125 Cel

1KX8

1K

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

5.5 V

1.75 mm

10 MHz

3.9 mm

5 ms

SPI

8192 bit

2.5 V

100 YEAR DATA RETENTION

e4

NOT SPECIFIED

NOT SPECIFIED

.000005 Amp

4.9 mm

CAV25320YE-GT3

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

4096 words

5

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.65 mm

125 Cel

4KX8

4K

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

5.5 V

1.2 mm

1000000 Write/Erase Cycles

10 MHz

3 mm

Not Qualified

5 ms

SPI

32768 bit

2.5 V

e4

NOT SPECIFIED

NOT SPECIFIED

.000004 Amp

4.4 mm

CAV25M01VE-GT3

Onsemi

EEPROM

AUTOMOTIVE

8

VSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

131072 words

5

8

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

.8 mm

125 Cel

128KX8

128K

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

R-PDSO-G8

1

5.5 V

.39 mm

10 MHz

3.9 mm

5 ms

SPI

1048576 bit

2.5 V

e4

NOT SPECIFIED

NOT SPECIFIED

4.9 mm

CAT24S64C4ATR

Onsemi

EEPROM

INDUSTRIAL

4

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

8192 words

5

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

8KX8

8K

-40 Cel

TIN SILVER COPPER

BOTTOM

S-PBGA-B4

1

5.5 V

.35 mm

1 MHz

.85 mm

5 ms

I2C

65536 bit

1.7 V

LG-MAX, WD-MAX, ALSO AVAILABLE 1.6-5.5V OPERATES WITH 0.1MHZ AND 0.4MHZ

e1

30

260

.85 mm

CAT25128VI-G

Onsemi

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

4 mA

16384 words

5

2/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

100

1.27 mm

85 Cel

16KX8

16K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

5 MHz

3.9 mm

Not Qualified

5 ms

SPI

131072 bit

1.8 V

e4

30

260

.000001 Amp

4.9 mm

CAT25160HU2I-GT3

Onsemi

EEPROM

INDUSTRIAL

8

HVSON

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

2 mA

2048 words

5

2/5

8

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SOLCC8,.08,20

EEPROMs

100

.5 mm

85 Cel

2KX8

2K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

S-PDSO-N8

1

5.5 V

.55 mm

1000000 Write/Erase Cycles

5 MHz

2 mm

Not Qualified

5 ms

SPI

16384 bit

2.5 V

100 YEAR DATA RETENTION

e4

260

.000002 Amp

2 mm

CAT25160VP2I-GT3

Onsemi

EEPROM

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

2 mA

2048 words

5

2/5

8

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SOLCC8,.11,20

EEPROMs

100

.5 mm

85 Cel

2KX8

2K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-N8

1

5.5 V

.8 mm

1000000 Write/Erase Cycles

5 MHz

2 mm

Not Qualified

5 ms

SPI

16384 bit

2.5 V

100 YEAR DATA RETENTION

e4

260

.000002 Amp

3 mm

CAT28C16ALI-20

Onsemi

EEPROM

INDUSTRIAL

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

35 mA

2048 words

5

5

8

IN-LINE

DIP24,.6

EEPROMs

100

2.54 mm

85 Cel

2KX8

2K

-40 Cel

NO

TIN

DUAL

R-PDIP-T24

5.5 V

6.35 mm

10000 Write/Erase Cycles

15.24 mm

Not Qualified

10 ms

16384 bit

4.5 V

e3

.0001 Amp

31.875 mm

200 ns

5

YES

CAT28C256LI15

Onsemi

EEPROM

INDUSTRIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

32768 words

5

YES

5

8

IN-LINE

DIP28,.6

EEPROMs

100

2.54 mm

85 Cel

32KX8

32K

-40 Cel

NO

TIN

DUAL

R-PDIP-T28

5.5 V

5.08 mm

100000 Write/Erase Cycles

15.24 mm

Not Qualified

5 ms

262144 bit

4.5 V

64

e3

.00015 Amp

36.695 mm

150 ns

5

YES

CAT93C46YI-G

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

1 mA

64 words

5

2/5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

8

EEPROMs

100

.65 mm

85 Cel

64X16

64

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

SOFTWARE

R-PDSO-G8

1

5.5 V

1.2 mm

1000000 Write/Erase Cycles

2 MHz

3 mm

Not Qualified

MICROWIRE

1024 bit

1.8 V

100 YEAR DATA RETENTION

e4

260

.000001 Amp

4.4 mm

CAT93C66YI-GT3

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

256 words

5

3/5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

8

EEPROMs

100

.65 mm

85 Cel

256X16

256

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

SOFTWARE

R-PDSO-G8

1

5.5 V

1.2 mm

1000000 Write/Erase Cycles

2 MHz

3 mm

Not Qualified

MICROWIRE

4096 bit

1.8 V

100 YEAR DATA RETENTION

e4

30

260

.00001 Amp

4.4 mm

CAT93C86VI-GT3

Onsemi

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

16384 words

5

3/5

1

SMALL OUTLINE

SOP8,.25

8

EEPROMs

100

1.27 mm

85 Cel

16KX1

16K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

.5 MHz

3.9 mm

Not Qualified

MICROWIRE

16384 bit

1.8 V

e4

30

260

.00001 Amp

4.9 mm

CAV24C256YE-GT3

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

SERIAL

SYNCHRONOUS

3 mA

32768 words

3.3

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.65 mm

125 Cel

32KX8

32K

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1

5.5 V

1.2 mm

1000000 Write/Erase Cycles

1 MHz

3 mm

Not Qualified

5 ms

SPI

262144 bit

2.5 V

e4

NOT SPECIFIED

NOT SPECIFIED

.000005 Amp

4.4 mm

CAT25320YI-GT3

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

4096 words

5

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.65 mm

85 Cel

4KX8

4K

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

5.5 V

1.2 mm

1000000 Write/Erase Cycles

5 MHz

3 mm

Not Qualified

5 ms

SPI

32768 bit

1.8 V

100 YEAR DATA RETENTION

e4

40

260

.000001 Amp

4.4 mm

CAT24C512C8UTR

Onsemi

EEPROM

INDUSTRIAL

8

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

65536 words

5

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

64KX8

64K

-40 Cel

TIN SILVER

BOTTOM

R-PBGA-B8

1

5.5 V

.4 mm

1 MHz

1.39 mm

5 ms

I2C

524288 bit

2.5 V

IT ALSO OPERATES AT FREQUENCY 0.4 MHZ AT 1.8 TO 5.5 V SUPPLY VOLTAGE

e2

30

260

1.65 mm

CAT25128YI-GT3

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

4 mA

16384 words

5

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.65 mm

85 Cel

16KX8

16K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

5.5 V

1.2 mm

1000000 Write/Erase Cycles

5 MHz

3 mm

Not Qualified

5 ms

SPI

131072 bit

1.8 V

100 YEAR DATA RETENTION

e4

30

260

.000001 Amp

4.4 mm

CAT24C64LI

Onsemi

EEPROM

INDUSTRIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SERIAL

SYNCHRONOUS

2 mA

8192 words

3.3

2/5

8

IN-LINE

DIP8,.3

EEPROMs

100

2.54 mm

85 Cel

8KX8

8K

-40 Cel

1010DDDR

DUAL

1

HARDWARE

R-PDIP-T8

5.5 V

5.33 mm

1000000 Write/Erase Cycles

1 MHz

7.62 mm

Not Qualified

5 ms

I2C

65536 bit

1.7 V

NOT SPECIFIED

NOT SPECIFIED

.000001 Amp

9.27 mm

CAT24WC66WI-G

Onsemi

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

8192 words

3/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

100

1.27 mm

85 Cel

8KX8

8K

-40 Cel

NICKEL PALLADIUM GOLD

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1

1000000 Write/Erase Cycles

Not Qualified

I2C

65536 bit

e4

260

.000001 Amp

CAT24C08YI-GT3

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

8192 words

3.3

2/5

1

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.65 mm

85 Cel

8KX1

8K

-40 Cel

NICKEL PALLADIUM GOLD

1010DMMR

DUAL

HARDWARE

R-PDSO-G8

1

5.5 V

1.2 mm

1000000 Write/Erase Cycles

.4 MHz

3 mm

Not Qualified

5 ms

I2C

8192 bit

1.7 V

e4

30

260

.000001 Amp

4.4 mm

CAT25040HU4I-GT3

Onsemi

EEPROM

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

2 mA

512 words

5

2/5

8

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SOLCC8,.11,20

EEPROMs

100

.5 mm

85 Cel

512X8

512

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-N8

1

5.5 V

.55 mm

1000000 Write/Erase Cycles

20 MHz

2 mm

Not Qualified

5 ms

SPI

4096 bit

1.8 V

e4

30

260

.000002 Amp

3 mm

CAT93C46BHU4I-GT3

Onsemi

EEPROM

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

64 words

5

16

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

8

.5 mm

85 Cel

64X16

64

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

R-PDSO-N8

1

5.5 V

.55 mm

4 MHz

2 mm

MICROWIRE

1024 bit

1.8 V

ALSO AVAILABLE 1.8-5.5V WITH 2MHZ FOR -40 TO 85 DEG CEL

e4

30

260

3 mm

CAT93C86S-2.5TE13

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2048 words

8

SMALL OUTLINE

16

1.27 mm

70 Cel

2KX8

2K

0 Cel

TIN LEAD

DUAL

R-PDSO-G8

6 V

1.75 mm

.5 MHz

3.9 mm

Not Qualified

10 ms

MICROWIRE

16384 bit

2.5 V

MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE

e0

4.9 mm

CAT93C56VI-1.8-G

Onsemi

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

128 words

5

2/5

16

SMALL OUTLINE

SOP8,.25

8

EEPROMs

100

1.27 mm

85 Cel

128X16

128

-40 Cel

DUAL

SOFTWARE

R-PDSO-G8

5.5 V

1000000 Write/Erase Cycles

1 MHz

Not Qualified

10 ms

MICROWIRE

2048 bit

4.5 V

Also operates at 1.8V and 2.5V

.00001 Amp

CAT93C56VI-1.8-GREVE

Onsemi

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

128 words

5

16

SMALL OUTLINE

8

1.27 mm

85 Cel

128X16

128

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G8

5.5 V

1.75 mm

.5 MHz

3.9 mm

Not Qualified

MICROWIRE

2048 bit

1.8 V

e4

4.9 mm

CAT93C57ZD4I-1.8-T2E

Onsemi

EEPROM CARD

INDUSTRIAL

8

HVSON

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

3 mA

128 words

5

2/5

16

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SOLCC8,.12,25

8

EEPROMs

100

.65 mm

85 Cel

128X16

128

-40 Cel

MATTE TIN

DUAL

SOFTWARE

S-PDSO-N8

1

5.5 V

.8 mm

1000000 Write/Erase Cycles

1 MHz

3 mm

Not Qualified

MICROWIRE

2048 bit

4.5 V

IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN

e3

.00001 Amp

3 mm

2.7

CAT93C66J-2.5TE7

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

512 words

8

SMALL OUTLINE

16

1.27 mm

70 Cel

512X8

512

0 Cel

TIN LEAD

DUAL

R-PDSO-G8

6 V

1.75 mm

.5 MHz

3.9 mm

Not Qualified

10 ms

MICROWIRE

4096 bit

2.5 V

MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE

e0

4.9 mm

CAT140169SWI-G

Onsemi

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

1 mA

2048 words

3/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

100

1.27 mm

85 Cel

2KX8

2K

-40 Cel

1010MMMR

DUAL

SOFTWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

16384 bit

.000017 Amp

CAT64LC20S-TE13

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

128 words

3.3

3/5

16

SMALL OUTLINE

SOP8,.25

EEPROMs

100

1.27 mm

70 Cel

3-STATE

128X16

128

0 Cel

TIN LEAD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

6 V

1.75 mm

1000000 Write/Erase Cycles

1 MHz

3.9 mm

Not Qualified

10 ms

SPI

2048 bit

2.5 V

SPI BUS SERIAL INTERFACE; AUTOMATIC WRITE

e0

.000003 Amp

4.9 mm

CAT93C57U-1.8REVE

Onsemi

EEPROM

COMMERCIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

131072 words

3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

.65 mm

70 Cel

128KX16

128K

0 Cel

TIN LEAD

DUAL

R-PDSO-G8

1

6 V

1.2 mm

.25 MHz

3 mm

Not Qualified

MICROWIRE

2097152 bit

1.8 V

e0

4.4 mm

CAT93C57XE-GT2

Onsemi

EEPROM

AUTOMOTIVE

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

128 words

3/5

16

SMALL OUTLINE

SOP8,.3

8

EEPROMs

100

1.27 mm

125 Cel

128X16

128

-40 Cel

DUAL

SOFTWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

MICROWIRE

2048 bit

.00001 Amp

CAT93C56LA-1.8REVE

Onsemi

EEPROM

INDUSTRIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SERIAL

SYNCHRONOUS

128 words

5

16

IN-LINE

8

2.54 mm

105 Cel

128X16

128

-40 Cel

MATTE TIN

DUAL

R-PDIP-T8

5.5 V

5.33 mm

.25 MHz

7.62 mm

Not Qualified

MICROWIRE

2048 bit

1.8 V

e3

9.27 mm

CAT93C57VA-GE

Onsemi

EEPROM CARD

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

128 words

5

3/5

16

SMALL OUTLINE

SOP8,.25

8

EEPROMs

100

1.27 mm

105 Cel

128X16

128

-40 Cel

MATTE TIN

DUAL

SOFTWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

1 MHz

3.9 mm

Not Qualified

MICROWIRE

2048 bit

4.5 V

IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN

e3

.00001 Amp

4.9 mm

2.7

CAT93C76UI-1.8TE13REVA

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

512 words

5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

.65 mm

85 Cel

512X16

512

-40 Cel

TIN LEAD

DUAL

R-PDSO-G8

1

5.5 V

1.1 mm

3 MHz

3 mm

Not Qualified

MICROWIRE

8192 bit

1.8 V

e0

4.4 mm

CAT93C66AKI-2.5TE7

Onsemi

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

256 words

16

SMALL OUTLINE

1.27 mm

85 Cel

256X16

256

-40 Cel

TIN LEAD

DUAL

R-PDSO-G8

6 V

2.03 mm

.5 MHz

5.25 mm

Not Qualified

10 ms

MICROWIRE

4096 bit

2.5 V

MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE

e0

5.3 mm

CAT93C86SI-1.8TE7

Onsemi

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2048 words

8

SMALL OUTLINE

16

1.27 mm

85 Cel

2KX8

2K

-40 Cel

TIN LEAD

DUAL

R-PDSO-G8

6 V

1.75 mm

.25 MHz

3.9 mm

Not Qualified

10 ms

MICROWIRE

16384 bit

1.8 V

MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE

e0

4.9 mm

CAT93C86WA-1.8-GT2C

Onsemi

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

1024 words

2/5

16

SMALL OUTLINE

SOP8,.25

8

EEPROMs

100

1.27 mm

105 Cel

1KX16

1K

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

MICROWIRE

16384 bit

.00001 Amp

CAT93C57ZD4I-T3REVE

Onsemi

EEPROM

INDUSTRIAL

8

HVSON

SQUARE

UNSPECIFIED

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

128 words

5

16

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

8

.65 mm

85 Cel

128X16

128

-40 Cel

MATTE TIN

DUAL

S-XDSO-N8

5.5 V

.8 mm

.5 MHz

3 mm

Not Qualified

MICROWIRE

2048 bit

2.5 V

e3

40

260

3 mm

CAT93C57XE-1.8-T2E

Onsemi

EEPROM CARD

AUTOMOTIVE

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

128 words

5

2/5

16

SMALL OUTLINE

SOP8,.3

8

EEPROMs

100

1.27 mm

125 Cel

128X16

128

-40 Cel

MATTE TIN

DUAL

SOFTWARE

R-PDSO-G8

1

5.5 V

2.03 mm

1000000 Write/Erase Cycles

1 MHz

5.23 mm

Not Qualified

MICROWIRE

2048 bit

4.5 V

IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN

e3

.00001 Amp

5.255 mm

2.7

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.