Onsemi EEPROM | Vyrian

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
CAT24M01XI-T2	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words	3.3		3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	100	1.27 mm	85 Cel			128KX8	128K	-40 Cel		Matte Tin (Sn) - annealed	1010DDMR		DUAL		HARDWARE	R-PDSO-G8	3	5.5 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.23 mm	Not Qualified	5 ms	SPI	1048576 bit	1.8 V			e3	NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	5.255 mm
CAT24C02YI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	3.3		1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel			256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e4	30	260	.000001 Amp	4.4 mm
CAT25640YI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel			8KX8	8K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	20 MHz	3 mm	Not Qualified	5 ms	SPI	65536 bit	1.8 V	100 YEAR DATA RETENTION		e4	40	260	.000001 Amp	4.4 mm
CAT24C08C4ATR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	2 mA	8192 words	3.3		1.8/5	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4,2X2,16		EEPROMs	100	.4 mm	85 Cel			8KX1	8K	-40 Cel		TIN SILVER COPPER	10100MMR		BOTTOM			R-PBGA-B4	1	5.5 V	.38 mm	1000000 Write/Erase Cycles	.4 MHz	.84 mm	Not Qualified	5 ms	I2C	8192 bit	1.7 V			e1	30	260	.000001 Amp	.86 mm
CAT24C256LI-G	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	32768 words	5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel			32KX8	32K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V	100 YEAR DATA RETENTION		e4		260	.000001 Amp	9.27 mm
CAT28C64BL12	Onsemi	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	70 Cel			8KX8	8K	0 Cel	NO	TIN			DUAL			R-PDIP-T28		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		65536 bit	4.5 V		32	e3			.0001 Amp	36.695 mm	120 ns	5	YES
CAT25640VI-G	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			8KX8	8K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	65536 bit	1.8 V			e4	30	260	.000001 Amp	4.9 mm
CAV24C16WE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	16384 words	3.6			1	SMALL OUTLINE	SOP8,.25			100	1.27 mm	125 Cel			16KX1	16K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V	100 YEAR DATA RETENTION		e4	30	260	.000005 Amp	4.9 mm
CAT24C512XI-T2	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	65536 words	5		2/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	100	1.27 mm	85 Cel			64KX8	64K	-40 Cel		MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	3	5.5 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.23 mm	Not Qualified	5 ms	I2C	524288 bit	1.8 V	100 YEAR DATA RETENTION		e3	30	260	.000002 Amp	5.255 mm
CAT25256YI-G	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	4 mA	32768 words	5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel			32KX8	32K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	262144 bit	1.8 V	100 YEAR DATA RETENTION		e4	40	260	.000001 Amp	4.4 mm
CAT24C64HU4I-GT3	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	8192 words	5		1.8/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	100	.5 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR		DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.55 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	65536 bit	1.7 V	100 YEAR DATA RETENTION		e4	NOT SPECIFIED	NOT SPECIFIED	.000003 Amp	3 mm
CAT24C03WI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	256 words	3.3		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V			e4	30	260	.000001 Amp	4.9 mm
CAT24C128YI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	3.3		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	1	EEPROMs	100	.65 mm	85 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V	5MICROAMP STANDBY CURRENT AVAILABLE @ 125 TEMP, AND OPERATES WITH 1.8VMIN SUPPLY @ 0.1MHZ		e4	30	260	.000002 Amp	4.4 mm		3.3
CAT34C02HU4IGT4A	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	16 words	5		1.8/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	100	.5 mm	85 Cel	NO		16X16	16	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR	YES	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	.55 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	256 bit	1.7 V	100 YEAR DATA RETENTION	16	e4	30	260	.000001 Amp	3 mm
CAT24C16HU4I-GT3	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	16384 words	3.3		1.8/5	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	100	.5 mm	85 Cel			16KX1	16K	-40 Cel		NICKEL PALLADIUM GOLD	1010MMMR		DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.55 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V			e4	30	260	.000001 Amp	3 mm
LE24L042CS-B-TFM-H	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		512 words	2.5			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				20	.4 mm	85 Cel			512X8	512	-40 Cel		TIN SILVER COPPER			BOTTOM			R-PBGA-B4	1	3.6 V	.5 mm		.4 MHz	.79 mm		10 ms	I2C	4096 bit	1.7 V	20 YEAR DATA RETENTION		e1	30	260		1.06 mm
CAT25256XI-T2	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	4 mA	32768 words	5		2/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	100	1.27 mm	85 Cel			32KX8	32K	-40 Cel		Matte Tin (Sn) - annealed			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	3	5.5 V	2.03 mm	1000000 Write/Erase Cycles	5 MHz	5.23 mm	Not Qualified	5 ms	SPI	262144 bit	1.8 V	100 YEAR DATA RETENTION		e3	40	260	.000001 Amp	5.255 mm
CAT25320VI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	4096 words	5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			4KX8	4K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	5 ms	SPI	32768 bit	1.8 V	100 YEAR DATA RETENTION		e4	40	260	.000001 Amp	4.9 mm
CAT24C08TDI-GT3	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words	3.3		2/5	1	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel			8KX1	8K	-40 Cel		NICKEL PALLADIUM GOLD	10100MMR		DUAL		HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	8192 bit	1.7 V			e4	30	260	.000001 Amp	2.9 mm
CAT24C16C5ATR	Onsemi	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	2 mA	16384 words	3.3		1.8/5	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA5,3X3,10/6		EEPROMs	100	.3 mm	85 Cel			16KX1	16K	-40 Cel		TIN SILVER COPPER	1010MMMR		BOTTOM		HARDWARE	R-PBGA-B5	1	5.5 V	.39 mm	1000000 Write/Erase Cycles	.4 MHz	.84 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V			e1	30	260	.000001 Amp	.86 mm
CAT24C32VP2I-GT3	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	4096 words	5		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	100	.5 mm	85 Cel			4KX8	4K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	32768 bit	1.7 V	100 YEAR DATA RETENTION		e4		260	.000001 Amp	3 mm
CAV24C08WE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words	3.6			1	SMALL OUTLINE	SOP8,.25			100	1.27 mm	125 Cel			8KX1	8K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)			DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	8192 bit	2.5 V	100 YEAR DATA RETENTION		e4	NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	4.9 mm
CAV24C32WE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4096 words	3.3			8	SMALL OUTLINE					1.27 mm	125 Cel			4KX8	4K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)			DUAL			R-PDSO-G8	1	5.5 V	1.75 mm		.4 MHz	3.9 mm		5 ms	I2C	32768 bit	2.5 V			e4	NOT SPECIFIED	NOT SPECIFIED		4.9 mm
CAV25128VE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	2 mA	16384 words	5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel			16KX8	16K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	131072 bit	2.5 V			e4	NOT SPECIFIED	NOT SPECIFIED	.000003 Amp	4.9 mm
CAT25080VI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	1024 words	5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			1KX8	1K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	5 ms	SPI	8192 bit	2.5 V	100 YEAR DATA RETENTION		e4	40	260	.000002 Amp	4.9 mm
CAT25640VP2I-GT3	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words	5		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	100	.5 mm	85 Cel			8KX8	8K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)			DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	20 MHz	2 mm	Not Qualified	5 ms	SPI	65536 bit	1.8 V	100 YEAR DATA RETENTION		e4	40	260	.000001 Amp	3 mm
CAT24C02VP2E-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words	3.3		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	100	.5 mm	125 Cel			256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V			e4		260	.000005 Amp	3 mm
CAT24C02YI-G	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	3.3		1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel			256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e4		260	.000001 Amp	4.4 mm
CAT24C08WI-G	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	1024 words	3.3		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel		3-STATE	1KX8	1K	-40 Cel		NICKEL PALLADIUM GOLD	1010DMMR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	8192 bit	1.7 V			e4	30	260	.000001 Amp	4.9 mm		3.3
CAT24C128YI-GT3JN	Onsemi	EEPROM		8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	3.3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	1		100	.65 mm	85 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)			DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm		5 ms	I2C	131072 bit	2.5 V	5MICROAMP STANDBY CURRENT AVAILABLE @ 125 TEMP, AND OPERATES WITH 1.8VMIN SUPPLY @ 0.1MHZ		e4			.000002 Amp	4.4 mm		3.3
CAV24C04WE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	4096 words	3.6			1	SMALL OUTLINE	SOP8,.25			100	1.27 mm	125 Cel			4KX1	4K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	4096 bit	2.5 V	100 YEAR DATA RETENTION		e4	30	260	.000005 Amp	4.9 mm
CAT93C56VI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	128 words	5		3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	85 Cel			128X16	128	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V			e4	30	260	.000002 Amp	4.9 mm
CAV24C04YE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	4096 words	3.6			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SOP8,.25			100	.65 mm	125 Cel			4KX1	4K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	4096 bit	2.5 V	100 YEAR DATA RETENTION		e4	30	260	.000005 Amp	4.4 mm
CAT24C64YI-G	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words	1.8		1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel			8KX8	8K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	1.7 V			e4	30	260	.000003 Amp	4.4 mm
CAT28C256T13I-15TE7	Onsemi	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5			8	SMALL OUTLINE, THIN PROFILE					.55 mm	85 Cel			32KX8	32K	-40 Cel		TIN LEAD			DUAL			R-PDSO-G28	2	5.5 V	1.2 mm			8 mm	Not Qualified			262144 bit	4.5 V			e0				11.8 mm	150 ns	5
LE24L042CS-B-SH	Onsemi	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		512 words	2.5			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				20	.5 mm	85 Cel			512X8	512	-40 Cel		Tin/Silver/Copper (Sn/Ag/Cu)			BOTTOM			R-PBGA-B6	1	3.6 V	.5 mm		.4 MHz	1.06 mm		10 ms	I2C	4096 bit	1.7 V	20 YEAR DATA RETENTION		e1				1.5 mm
NV25020MUW3VTBG	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words	5			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			100	.5 mm	125 Cel		3-STATE	256X8	256	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	.55 mm	1000000 Write/Erase Cycles	10 MHz	2 mm		5 ms	SPI	2048 bit	1.8 V			e4	30	260	.000005 Amp	3 mm
NV25256MUW3VTBG	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		32768 words	5			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	125 Cel			32KX8	32K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-N8	1	5.5 V	.55 mm		10 MHz	2 mm		5 ms		262144 bit	2.5 V	IT ALSO OPERATES AT FREQUENCY 5 MHZ AT 1.8 TO 5.5 V SUPPLY VOLTAGE		e4	30	260		3 mm		5
NV25320MUW3VTBG	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		4096 words	5			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	125 Cel			4KX8	4K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-N8	1	5.5 V	.55 mm		10 MHz	2 mm		5 ms	SPI	32768 bit	2.5 V			e4	30	260		3 mm
NV25512MUW3VTBG	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		65536 words	5			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	125 Cel			64KX8	64K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-N8	1	5.5 V	.55 mm		10 MHz	2 mm		4 ms		524288 bit	2.5 V			e4	30	260		3 mm		5
CAT24C02TDI-GT3	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words	3.3		1.8/5	1	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel			2KX1	2K	-40 Cel		NICKEL PALLADIUM GOLD	1010000R		DUAL		HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e4		260	.000003 Amp	2.9 mm
CAT28C256T13I-15TE13	Onsemi	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5			8	SMALL OUTLINE, THIN PROFILE					.55 mm	85 Cel			32KX8	32K	-40 Cel		TIN LEAD			DUAL			R-PDSO-G28	2	5.5 V	1.2 mm			8 mm	Not Qualified			262144 bit	4.5 V			e0				11.8 mm	150 ns	5
CAV25010YE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		128 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	125 Cel			128X8	128	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)			DUAL			R-PDSO-G8	1	5.5 V	1.2 mm		10 MHz	3 mm		5 ms	SPI	1024 bit	2.5 V			e4	NOT SPECIFIED	NOT SPECIFIED		4.4 mm
CAT25010VI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			128X8	128	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	20 MHz	3.9 mm	Not Qualified	5 ms	SPI	1024 bit	1.8 V			e4	40	260	.000002 Amp	4.9 mm
NV25080DWHFT3G	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words	5			8	SMALL OUTLINE					1.27 mm	150 Cel			1KX8	1K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-G8	1	5.5 V	1.75 mm		10 MHz	3.9 mm		4 ms	SPI	8192 bit	2.5 V			e4	30	260		4.9 mm
CAT24C256YI-G	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel			32KX8	32K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V			e4	30	260	.000001 Amp	4.4 mm
CAV24C256WE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	3.3		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel			32KX8	32K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	SPI	262144 bit	2.5 V			e4	30	260	.000005 Amp	4.9 mm
CAT24C02YI-GT3A	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	3.3		1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel			256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e4	30	260	.000001 Amp	4.4 mm

Onsemi EEPROM 2,400+

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