Onsemi EEPROM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish I2C Control Byte Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

CAT24C02WI-G

Onsemi

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

256 words

3.3

1.8/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

100

1.27 mm

85 Cel

256X8

256

-40 Cel

NICKEL PALLADIUM GOLD

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

.4 MHz

3.9 mm

Not Qualified

5 ms

I2C

2048 bit

1.7 V

e4

260

.000001 Amp

4.9 mm

CAT25010YI-G

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

128 words

5

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.65 mm

85 Cel

128X8

128

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

5.5 V

1.2 mm

1000000 Write/Erase Cycles

20 MHz

3 mm

Not Qualified

5 ms

SPI

1024 bit

1.8 V

e4

30

260

.000002 Amp

4.4 mm

CAT25010YI-GT3

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

128 words

5

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.65 mm

85 Cel

128X8

128

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

5.5 V

1.2 mm

1000000 Write/Erase Cycles

20 MHz

3 mm

Not Qualified

5 ms

SPI

1024 bit

1.8 V

e4

40

260

.000002 Amp

4.4 mm

CAT25040YI-GT3

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

512 words

5

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.65 mm

85 Cel

512X8

512

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

5.5 V

1.2 mm

1000000 Write/Erase Cycles

20 MHz

3 mm

Not Qualified

5 ms

SPI

4096 bit

1.8 V

e4

30

260

.000002 Amp

4.4 mm

CAT25M01YI-GT3

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

131072 words

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.65 mm

85 Cel

128KX8

128K

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

R-PDSO-G8

1

5.5 V

1.2 mm

5 MHz

3 mm

5 ms

SPI

1048576 bit

1.8 V

e4

40

260

4.4 mm

CAT28C16AL-20

Onsemi

EEPROM

COMMERCIAL

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

35 mA

2048 words

5

5

8

IN-LINE

DIP24,.6

EEPROMs

100

2.54 mm

70 Cel

2KX8

2K

0 Cel

NO

TIN

DUAL

R-PDIP-T24

5.5 V

6.35 mm

10000 Write/Erase Cycles

15.24 mm

Not Qualified

10 ms

16384 bit

4.5 V

e3

.0001 Amp

31.875 mm

200 ns

5

YES

CAT28C256T13I-15T

Onsemi

EEPROM

INDUSTRIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

32768 words

5

YES

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

EEPROMs

.55 mm

85 Cel

32KX8

32K

-40 Cel

NO

DUAL

R-PDSO-G28

1

5.5 V

1.2 mm

100000 Write/Erase Cycles

8 mm

Not Qualified

5 ms

262144 bit

4.5 V

10000 PROGRAM/ERASE CYCLES

64

.00015 Amp

11.8 mm

150 ns

5

YES

LE2464CXATBG

Onsemi

EEPROM

INDUSTRIAL

6

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

8192 words

2.5

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

8KX8

8K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B6

1

3.6 V

.33 mm

.4 MHz

.8 mm

5 ms

I2C

65536 bit

1.7 V

e1

30

260

1.2 mm

N24S64BC4DYT3G

Onsemi

EEPROM

INDUSTRIAL

4

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

8192 words

5

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

8KX8

8K

-40 Cel

TIN SILVER COPPER

BOTTOM

S-PBGA-B4

1

5.5 V

.3 mm

1 MHz

.77 mm

5 ms

I2C

65536 bit

1.7 V

IT ALSO OPERATES AT 0.4MHZ

e1

30

260

.77 mm

NV25020DWHFT3G

Onsemi

EEPROM

AUTOMOTIVE

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

256 words

5

8

SMALL OUTLINE

1.27 mm

150 Cel

256X8

256

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

R-PDSO-G8

1

5.5 V

1.75 mm

10 MHz

3.9 mm

4 ms

SPI

2048 bit

2.5 V

e4

NOT SPECIFIED

NOT SPECIFIED

4.9 mm

NV25080MUW3VTBG

Onsemi

EEPROM

AUTOMOTIVE

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

NO LEAD

SERIAL

SYNCHRONOUS

3 mA

1024 words

5

8

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SOLCC8,.11,20

100

.5 mm

125 Cel

3-STATE

1KX8

1K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-N8

1

5.5 V

.55 mm

1000000 Write/Erase Cycles

10 MHz

2 mm

5 ms

SPI

8192 bit

2.5 V

IT ALSO OPERATES AT 1.8 TO 5.5 V SUPPLY VOLTAGE AT 5 MHZ FREQUENCY

e4

30

260

.000002 Amp

3 mm

80 ns

5

NV25640DWHFT3G

Onsemi

EEPROM

AUTOMOTIVE

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

8192 words

5

8

SMALL OUTLINE

1.27 mm

150 Cel

8KX8

8K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G8

1

5.5 V

1.75 mm

10 MHz

3.9 mm

4 ms

SPI

65536 bit

2.5 V

e4

30

260

4.9 mm

CAT24C04TDI-GT3

Onsemi

EEPROM

INDUSTRIAL

5

VSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

4096 words

3.3

2/5

1

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

TSOP5/6,.11,37

EEPROMs

100

.95 mm

85 Cel

4KX1

4K

-40 Cel

NICKEL PALLADIUM GOLD

1010000R

DUAL

HARDWARE

R-PDSO-G5

1

5.5 V

1 mm

1000000 Write/Erase Cycles

.4 MHz

1.6 mm

Not Qualified

5 ms

I2C

4096 bit

1.7 V

e4

30

260

.000001 Amp

2.9 mm

CAT24C04HU4I-GT3

Onsemi

EEPROM

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

2 mA

4096 words

3.3

1.8/5

1

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SOLCC8,.11,20

EEPROMs

100

.5 mm

85 Cel

4KX1

4K

-40 Cel

NICKEL PALLADIUM GOLD

1010DDMR

DUAL

HARDWARE

R-PDSO-N8

1

5.5 V

.55 mm

1000000 Write/Erase Cycles

.4 MHz

2 mm

Not Qualified

5 ms

I2C

4096 bit

1.7 V

e4

30

260

.000001 Amp

3 mm

CAT25160YE-G

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

2 mA

2048 words

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.635 mm

125 Cel

2KX8

2K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

1000000 Write/Erase Cycles

Not Qualified

SPI

16384 bit

e4

260

.000002 Amp

CAT150161MWI-GT3

Onsemi

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

16384 words

5

3/5

1

SMALL OUTLINE

SOP8,.25

EEPROMs

100

1.27 mm

85 Cel

16KX1

16K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

10 MHz

3.9 mm

Not Qualified

5 ms

SPI

16384 bit

2.5 V

e4

30

260

.00002 Amp

4.9 mm

NV25320DWHFT3G

Onsemi

EEPROM

AUTOMOTIVE

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

4096 words

5

8

SMALL OUTLINE

1.27 mm

150 Cel

4KX8

4K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G8

1

5.5 V

1.75 mm

10 MHz

3.9 mm

4 ms

SPI

32768 bit

2.5 V

e4

30

260

4.9 mm

CAT25020VI-GT3

Onsemi

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

256 words

5

2/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

100

1.27 mm

85 Cel

256X8

256

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

20 MHz

3.9 mm

Not Qualified

5 ms

SPI

2048 bit

1.8 V

e4

30

260

.000002 Amp

4.9 mm

CAT25640VE-GT3

Onsemi

EEPROM

AUTOMOTIVE

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

8192 words

5

3/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

100

1.27 mm

125 Cel

8KX8

8K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

10 MHz

3.9 mm

Not Qualified

5 ms

SPI

65536 bit

2.5 V

100 YEAR DATA RETENTION

e4

30

260

.000002 Amp

4.9 mm

CAT93C66VI

Onsemi

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

256 words

5

3/5

16

SMALL OUTLINE

SOP8,.25

8

EEPROMs

100

1.27 mm

85 Cel

256X16

256

-40 Cel

TIN

DUAL

SOFTWARE

R-PDSO-G8

6 V

1.75 mm

1000000 Write/Erase Cycles

.5 MHz

3.9 mm

Not Qualified

MICROWIRE

4096 bit

2.5 V

1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION

e3

260

.00001 Amp

4.9 mm

CAV25256YE-GT3

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

SERIAL

SYNCHRONOUS

32768 words

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.65 mm

125 Cel

32KX8

32K

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

R-PDSO-G8

1

5.5 V

1.2 mm

10 MHz

3 mm

5 ms

SPI

262144 bit

2.5 V

e4

NOT SPECIFIED

NOT SPECIFIED

4.4 mm

CAT24C02HU4IGT3A

Onsemi

EEPROM

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

2 mA

256 words

3.3

1.8/5

8

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SOLCC8,.11,20

EEPROMs

100

.5 mm

85 Cel

256X8

256

-40 Cel

NICKEL PALLADIUM GOLD

1010DDDR

DUAL

HARDWARE

R-PDSO-N8

1

5.5 V

.55 mm

1000000 Write/Erase Cycles

.4 MHz

2 mm

Not Qualified

5 ms

I2C

2048 bit

1.7 V

e4

.000001 Amp

3 mm

CAT24C64C4CTR

Onsemi

EEPROM

INDUSTRIAL

4

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

2 mA

8192 words

1.8

1.8/5

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA4,2X2,16

EEPROMs

100

.4 mm

85 Cel

OPEN-DRAIN

8KX8

8K

-40 Cel

Tin/Silver (Sn/Ag)

1010000R

BOTTOM

HARDWARE

S-PBGA-B4

1

5.5 V

.35 mm

1000000 Write/Erase Cycles

.4 MHz

.76 mm

Not Qualified

5 ms

I2C

65536 bit

1.7 V

e2

30

260

.000003 Amp

.76 mm

CAT25160YE-GT3

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

2048 words

5

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.65 mm

125 Cel

2KX8

2K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

5.5 V

1.2 mm

1000000 Write/Erase Cycles

5 MHz

3 mm

Not Qualified

5 ms

SPI

16384 bit

1.8 V

100 YEAR DATA RETENTION

e4

30

260

.000002 Amp

4.4 mm

CAT25M01XI-T2

Onsemi

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

131072 words

5

8

SMALL OUTLINE

1.27 mm

85 Cel

128KX8

128K

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G8

3

5.5 V

2.03 mm

5 MHz

5.23 mm

5 ms

SPI

1048576 bit

1.8 V

e3

40

260

5.255 mm

CAT28C256L15

Onsemi

EEPROM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

32768 words

5

YES

5

8

IN-LINE

DIP28,.6

EEPROMs

100

2.54 mm

70 Cel

32KX8

32K

0 Cel

NO

TIN

DUAL

R-PDIP-T28

5.5 V

5.08 mm

100000 Write/Erase Cycles

15.24 mm

Not Qualified

5 ms

262144 bit

4.5 V

64

e3

.00015 Amp

36.695 mm

150 ns

5

YES

CAT28C64BH1312

Onsemi

EEPROM

COMMERCIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

8192 words

5

YES

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

EEPROMs

.55 mm

70 Cel

8KX8

8K

0 Cel

NO

Matte Tin (Sn)

DUAL

R-PDSO-G28

5.5 V

1.2 mm

100000 Write/Erase Cycles

8 mm

Not Qualified

5 ms

65536 bit

4.5 V

32

e3

.0001 Amp

11.8 mm

120 ns

5

YES

CAT28C64BH1390

Onsemi

EEPROM

COMMERCIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

8192 words

5

YES

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

EEPROMs

.55 mm

70 Cel

8KX8

8K

0 Cel

NO

Matte Tin (Sn)

DUAL

R-PDSO-G28

5.5 V

1.2 mm

100000 Write/Erase Cycles

8 mm

Not Qualified

5 ms

65536 bit

4.5 V

32

e3

.0001 Amp

11.8 mm

90 ns

5

YES

CAT64LC10J

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

64 words

5

3/5

16

SMALL OUTLINE

SOP8,.25

EEPROMs

100

1.27 mm

70 Cel

64X16

64

0 Cel

TIN LEAD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

6 V

1.75 mm

1000000 Write/Erase Cycles

1 MHz

3.9 mm

Not Qualified

10 ms

SPI

1024 bit

2.5 V

SPI BUS INTERFACE

e0

.000003 Amp

4.9 mm

CAT64LC20S

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

128 words

5

3/5

16

SMALL OUTLINE

SOP8,.25

EEPROMs

100

1.27 mm

70 Cel

128X16

128

0 Cel

TIN LEAD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

6 V

1.75 mm

1000000 Write/Erase Cycles

1 MHz

3.9 mm

Not Qualified

10 ms

SPI

2048 bit

2.5 V

SPI BUS INTERFACE

e0

.000003 Amp

4.9 mm

CAT64LC40J

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

256 words

3/5

16

SMALL OUTLINE

SOP8,.25

EEPROMs

100

1.27 mm

70 Cel

256X16

256

0 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

SPI

4096 bit

.000003 Amp

CAT64LC40LI-G

Onsemi

EEPROM

INDUSTRIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SERIAL

SYNCHRONOUS

256 words

3.3

16

IN-LINE

2.54 mm

85 Cel

256X16

256

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDIP-T8

6 V

5.33 mm

7.62 mm

SPI

4096 bit

2.5 V

e4

9.27 mm

CAT64LC40VI-GT3

Onsemi

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

32768 words

3.3

8

SMALL OUTLINE

1.27 mm

85 Cel

32KX8

32K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G8

1

6 V

1.75 mm

3.9 mm

Not Qualified

SPI

262144 bit

2.5 V

e4

30

260

4.9 mm

CAT24AA01WI-GT3

Onsemi

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

1 mA

128 words

2/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

100

1.27 mm

85 Cel

128X8

128

-40 Cel

NICKEL PALLADIUM GOLD

1010000R

DUAL

HARDWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

.4 MHz

3.9 mm

Not Qualified

5 ms

I2C

1024 bit

1.7 V

e4

30

260

.000001 Amp

4.9 mm

CAT24AA04TDI-GT3

Onsemi

EEPROM

INDUSTRIAL

5

VSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

1 mA

512 words

1.8

1.8/5

8

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

TSOP5/6,.11,37

EEPROMs

100

.95 mm

85 Cel

512X8

512

-40 Cel

NICKEL PALLADIUM GOLD

101000MR

DUAL

HARDWARE

R-PDSO-G5

1

5.5 V

1 mm

1000000 Write/Erase Cycles

.4 MHz

1.6 mm

Not Qualified

5 ms

I2C

4096 bit

1.7 V

e4

30

260

.000001 Amp

2.9 mm

CAT24C32WI-G

Onsemi

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

4096 words

3.3

1.8/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

100

1.27 mm

85 Cel

4KX8

4K

-40 Cel

NICKEL PALLADIUM GOLD

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

1 MHz

3.9 mm

Not Qualified

5 ms

I2C

32768 bit

2.5 V

ALSO OPERTAES 1.7V AT 100 KHZ

e4

30

260

.000001 Amp

4.9 mm

CAT24M01LI-G

Onsemi

EEPROM

INDUSTRIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SERIAL

SYNCHRONOUS

3 mA

131072 words

3.3

3/5

8

IN-LINE

DIP8,.3

EEPROMs

100

2.54 mm

85 Cel

128KX8

128K

-40 Cel

NICKEL PALLADIUM GOLD

1010DDMR

DUAL

HARDWARE

R-PDIP-T8

5.5 V

5.33 mm

1000000 Write/Erase Cycles

.4 MHz

7.62 mm

Not Qualified

5 ms

SPI

1048576 bit

1.8 V

e4

.000002 Amp

9.27 mm

CAT25160HU4I-GT3

Onsemi

EEPROM

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

2048 words

5

8

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

.5 mm

85 Cel

2KX8

2K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-N8

1

5.5 V

.55 mm

5 MHz

2 mm

5 ms

SPI

16384 bit

1.8 V

e4

30

260

3 mm

CAT64LC40WI

Onsemi

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

256 words

3/5

16

SMALL OUTLINE

SOP8,.25

EEPROMs

100

1.27 mm

85 Cel

256X16

256

-40 Cel

TIN

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

1000000 Write/Erase Cycles

Not Qualified

SPI

4096 bit

e3

260

.000003 Amp

CAT64LC40WI-GT3

Onsemi

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

32768 words

3.3

8

SMALL OUTLINE

1.27 mm

85 Cel

32KX8

32K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G8

1

6 V

1.75 mm

3.9 mm

Not Qualified

SPI

262144 bit

2.5 V

e4

30

260

4.9 mm

CAT64LC40YI-GT3

Onsemi

EEPROM

INDUSTRIAL

8

VSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

32768 words

3.3

8

SMALL OUTLINE, VERY THIN PROFILE

1.2 mm

85 Cel

32KX8

32K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G8

1

6 V

.65 mm

3 mm

Not Qualified

SPI

262144 bit

2.5 V

e4

30

260

4.4 mm

CAV24C32C4CTR

Onsemi

EEPROM

AUTOMOTIVE

4

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

4096 words

3.3

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

125 Cel

4KX8

4K

-40 Cel

Tin/Silver (Sn/Ag)

BOTTOM

S-PBGA-B4

1

5.5 V

.35 mm

.4 MHz

.76 mm

5 ms

I2C

32768 bit

2.5 V

e2

NOT SPECIFIED

NOT SPECIFIED

.76 mm

CAV24C64YE-GT3

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

SERIAL

SYNCHRONOUS

2 mA

65536 words

5

1

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

100

.65 mm

125 Cel

NO

64KX1

64K

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1

5.5 V

1.2 mm

1000000 Write/Erase Cycles

.4 MHz

3 mm

5 ms

I2C

65536 bit

2.5 V

e4

30

260

.000005 Amp

4.4 mm

.0035 ns

5

CAT24C01YI-G

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

1024 words

3.3

2/5

1

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.65 mm

85 Cel

1KX1

1K

-40 Cel

NICKEL PALLADIUM GOLD

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1

5.5 V

1.2 mm

1000000 Write/Erase Cycles

.4 MHz

3 mm

Not Qualified

5 ms

I2C

1024 bit

1.7 V

e4

260

.000001 Amp

4.4 mm

CAT24C02WI-GA

Onsemi

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

256 words

3.3

1.8/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

100

1.27 mm

85 Cel

256X8

256

-40 Cel

NICKEL PALLADIUM GOLD

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

.4 MHz

3.9 mm

Not Qualified

5 ms

I2C

2048 bit

1.7 V

e4

.000001 Amp

4.9 mm

CAT24C02ZE-GT3A

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

256 words

3.3

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.65 mm

125 Cel

256X8

256

-40 Cel

NICKEL PALLADIUM GOLD

1010DDDR

DUAL

HARDWARE

S-PDSO-G8

1

5.5 V

1.2 mm

1000000 Write/Erase Cycles

.4 MHz

3 mm

Not Qualified

5 ms

I2C

2048 bit

1.8 V

e4

.000005 Amp

3 mm

CAT24C512LI-G

Onsemi

EEPROM

INDUSTRIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SERIAL

SYNCHRONOUS

2.5 mA

65536 words

3.3

2/5

8

IN-LINE

DIP8,.3

EEPROMs

100

2.54 mm

85 Cel

NO

64KX8

64K

-40 Cel

NICKEL PALLADIUM GOLD

1010DDDR

DUAL

1

HARDWARE

R-PDIP-T8

5.5 V

5.33 mm

1000000 Write/Erase Cycles

.4 MHz

7.62 mm

Not Qualified

5 ms

I2C

524288 bit

1.8 V

e4

.000002 Amp

9.27 mm

CAT24WC64WI

Onsemi

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

8192 words

8

SMALL OUTLINE

SOP8,.25

100

1.27 mm

85 Cel

8KX8

8K

-40 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

5.5 V

1.75 mm

1000000 Write/Erase Cycles

.1 MHz

3.9 mm

10 ms

I2C

65536 bit

2.5 V

.000001 Amp

4.9 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.