Vishay Intertechnology - 2N3823

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-30 Code: R-PDSO-G4;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Transistor Application: AMPLIFIER; Terminal Position: DUAL; Reference Standard: IEC-60134;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Qualification: Not Qualified; Maximum Feedback Capacitance (Crss): 1 pF;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 7 V; Transistor Application: AMPLIFIER; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Operating Mode: DUAL GATE, ENHANCEMENT MODE; Terminal Position: DUAL; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Maximum Drain Current (ID): .03 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Field Effect Transistor Technology: JUNCTION; JEDEC-95 Code: TO-72; Additional Features: LOW NOISE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Terminal Position: DUAL; Highest Frequency Band: VERY HIGH FREQUENCY BAND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: JUNCTION; Terminal Form: THROUGH-HOLE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Transistor Element Material: SILICON; No. of Terminals: 3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Transistor Element Material: SILICON; Maximum Drain Current (ID): 1 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Package Body Material: PLASTIC/EPOXY; Terminal Position: DUAL;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): .4 pF; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Field Effect Transistor Technology: JUNCTION; Additional Features: LOW NOISE;

P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Operating Mode: DEPLETION MODE; JESD-609 Code: e3;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: AMPLIFIER; JESD-30 Code: R-PDSO-G4; Minimum DS Breakdown Voltage: 18 V;

RF Small Signal Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Moisture Sensitivity Level (MSL): NOT APPLICABLE; Peak Reflow Temperature (C): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JESD-30 Code: O-PBCY-T3; Field Effect Transistor Technology: JUNCTION; Package Style (Meter): CYLINDRICAL;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Operating Mode: DUAL GATE, ENHANCEMENT MODE; Package Shape: RECTANGULAR;