NXP Semiconductors - 934020430235

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): .03 A; No. of Elements: 2;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Package Shape: ROUND; Field Effect Transistor Technology: JUNCTION;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Qualification: Not Qualified; JESD-30 Code: R-PDSO-G3;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Terminal Form: GULL WING; Operating Mode: DUAL GATE, ENHANCEMENT MODE;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: LOW NOISE; Operating Mode: DUAL GATE, DEPLETION MODE; Minimum DS Breakdown Voltage: 12 V;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; No. of Elements: 1; JEDEC-95 Code: TO-252;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Terminals: 3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Qualification: Not Qualified; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Minimum DS Breakdown Voltage: 30 V; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

Broadcom's ATF-35143-TR1G is an N-channel FET with 5.5V DS breakdown voltage and 16.5dB power gain, ideal for amplifier applications in L Band frequencies. It features a small outline package with gull wing terminals, high electron mobility technology, and operates in enhancement mode up to 160°C ambient temperature.

N-CHANNEL; Maximum Power Dissipation Ambient: .13 W; Maximum Drain Current (Abs) (ID): .06 A; Maximum Drain Current (ID): .06 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: JUNCTION; Package Body Material: PLASTIC/EPOXY; Maximum Feedback Capacitance (Crss): .4 pF;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Feedback Capacitance (Crss): 1 pF; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Package Body Material: METAL; JESD-30 Code: O-MBCY-W4;

MMBFJ309LT1G by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage, operating in DEPLETION MODE. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, it features a max power dissipation of 0.225W and can withstand temperatures up to 150°C.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Case Connection: SOURCE; Operating Mode: DEPLETION MODE; Field Effect Transistor Technology: JUNCTION;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Style (Meter): CYLINDRICAL; Operating Mode: DEPLETION MODE; Terminal Form: THROUGH-HOLE;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Transistor Element Material: SILICON; Operating Mode: ENHANCEMENT MODE; Minimum Power Gain (Gp): 22.8 dB;