Infineon Technologies - SFH310

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 125 Cel; Maximum Response Time: .000008 s; Minimum Operating Temperature: -60 Cel; Maximum Power Dissipation: .05 W;

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum On State Current: .02 A; Shape: ROUND; Peak Wavelength (nm): 900;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; Maximum Response Time: .000009 s; Maximum Operating Temperature: 125 Cel;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Maximum Dark Current: 200 nA; Infrared (IR) Range: YES; Maximum On State Current: .05 A; Size: 2.4 mm;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .165 W; JESD-609 Code: e0; Maximum Dark Current: 200 nA;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Minimum Operating Temperature: -40 Cel; Maximum Dark Current: 100 nA;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum On State Current: .0001 A; Maximum Operating Temperature: 85 Cel; Maximum Power Dissipation: .05 W; Maximum Response Time: .000025 s;

PHOTO DARLINGTON; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Collector-emitter Breakdown Voltage: 25 V; Nominal Light Current: 4 mA; JESD-609 Code: e0; No. of Functions: 1;

PHOTO TRANSISTOR; Maximum Operating Temperature: 125 Cel; Maximum Dark Current: 100 nA; Nominal Light Current: 2 mA; No. of Functions: 12; Minimum Operating Temperature: -65 Cel;

PHOTO TRANSISTOR; Maximum Dark Current: 100 nA; Configuration: SINGLE; Minimum Collector-emitter Breakdown Voltage: 70 V; No. of Functions: 1; Nominal Light Current: 2.5 mA;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; Maximum On State Current: .05 A; Peak Wavelength (nm): 850;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 880; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -25 Cel; Maximum Power Dissipation: .075 W;

PHOTO TRANSISTOR; Terminal Finish: Tin/Silver (Sn/Ag); JESD-609 Code: e2; Additional Features: HIGH SENSITIVITY; Configuration: SINGLE; Peak Wavelength (nm): 925;

TEKT5400S-ASZ by Vishay Intertechnology is a 3mm round phototransistor with peak wavelength of 920nm. It operates b/w -40 to 85°C, has max power dissipation of 0.15W, and collector-emitter breakdown voltage of 70V. Ideal for IR applications with nominal light current of 4mA and dark current up to 100nA.

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Power Dissipation: .05 W; Maximum Response Time: .000008 s; Maximum Dark Current: 25 nA; Minimum Operating Temperature: -60 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .2 W; Maximum Dark Current: 100 nA; JESD-609 Code: e0;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; Minimum Operating Temperature: -55 Cel; Maximum Dark Current: 200 nA;

Vishay Intertechnology's TEMT6200FX01 is a 2mm single phototransistor with peak wavelength of 550nm. It operates b/w -40 to 100°C, has max power dissipation of 0.1W, and collector-emitter breakdown voltage of 6V. Ideal for surface mount applications requiring optoelectronic sensing in various industries.

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Shape: ROUND; Maximum Operating Temperature: 100 Cel; Minimum Collector-emitter Breakdown Voltage: 35 V;