Toshiba - TPS615-B

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Size: 2.4 mm; Minimum Collector-emitter Breakdown Voltage: 35 V; Maximum Response Time: .000008 s; Shape: ROUND;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Nominal Light Current: .65 mA; No. of Functions: 1; Peak Wavelength (nm): 860;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Additional Features: HIGH SENSITIVITY; Nominal Light Current: .18 mA; Size: 3.8 mm;

PHOTO TRANSISTOR; Nominal Light Current: 1.5 mA; Configuration: SINGLE; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum Dark Current: 100 nA; Maximum Operating Temperature: 85 Cel;

SFH309FA by Infineon Technologies is a phototransistor with peak wavelength of 900nm, max operating temp of 100°C, and min operating temp of -55°C. Ideal for applications requiring through hole mounting, it has a max on state current of 0.015A and max dark current of 200nA.

Vishay Intertechnology's VEMT3700-GS08 is a 2.4mm single phototransistor with peak wavelength of 850nm. Operating b/w -40°C to 100°C, it has a max power dissipation of 0.1W and min collector-emitter breakdown voltage of 70V. Ideal for surface mount applications in infrared range, it offers nominal light current of 0.5mA and max dark current of 200nA.

TEFT4300 by Vishay Intertechnology is a 3mm phototransistor with peak wavelength of 925nm. It operates b/w -40 to 100°C, with max power dissipation of 0.185W and response time of 0.0000023s. Ideal for applications requiring IR detection in through-hole mounting configurations.

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Maximum Response Time: .00001 s; JESD-609 Code: e0;

PHOTO TRANSISTOR; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 880; Maximum Dark Current: 100 nA; Configuration: SINGLE;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 100 Cel; Peak Wavelength (nm): 870;

PHOTO DARLINGTON; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Collector-emitter Breakdown Voltage: 20 V; Additional Features: HIGH SENSITIVITY; Peak Wavelength (nm): 850;

PHOTO TRANSISTOR; Infrared (IR) Range: YES; Size: 1.8 mm; No. of Functions: 1; Configuration: SINGLE; Shape: ROUND;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000015 s; Maximum Operating Temperature: 100 Cel; Maximum Power Dissipation: .2 W;

PHOTO TRANSISTOR;

PHOTO DARLINGTON; Minimum Operating Temperature: 0 Cel; Infrared (IR) Range: NO; Size: 1.6 mm; Configuration: SINGLE; Additional Features: DOUBLE END; HIGH SENSITIVITY;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 100 Cel; Minimum Operating Temperature: -40 Cel; Maximum Response Time: .00001 s; Maximum Power Dissipation: .06 W;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum On State Current: .05 A; Maximum Operating Temperature: 100 Cel;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Configuration: SINGLE; Infrared (IR) Range: YES; Minimum Operating Temperature: -30 Cel; Size: 3.1 mm;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Infrared (IR) Range: YES; Size: 2 mm; Minimum Collector-emitter Breakdown Voltage: 30 V; Shape: RECTANGULAR;

PHOTO TRANSISTOR; Terminal Finish: Tin/Lead (Sn/Pb); Nominal Light Current: .4 mA; Maximum Dark Current: 100 nA; Infrared (IR) Range: YES; JESD-609 Code: e0;