Toshiba - TPS605(LB)-A

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000008 s; Maximum Operating Temperature: 125 Cel; Maximum Power Dissipation: .05 W; Peak Wavelength (nm): 900;

KDT00030TR by Fairchild Semiconductor is a phototransistor with a peak wavelength of 630nm. It has a max operating temperature of 85 °C and a min operating temperature of -40 °C. The terminal finish is Matte Tin (Sn) and it has a max dark current of 100nA. It is designed for surface mount mounting and can be used in optoelectronic applications.

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Power Dissipation: .05 W; Maximum Operating Temperature: 125 Cel; Maximum Dark Current: 25 nA; Maximum Response Time: .000008 s;

PHOTO TRANSISTOR; Terminal Finish: Matte Tin (Sn); Minimum Operating Temperature: -40 Cel; Configuration: SINGLE; Size: 5 mm; Infrared (IR) Range: YES;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Minimum Operating Temperature: -65 Cel; Peak Wavelength (nm): 930; Maximum Power Dissipation: .05 W; Nominal Light Current: 7 mA;

PHOTO DARLINGTON; Maximum Dark Current: 250 nA; Configuration: SINGLE; No. of Functions: 1; Minimum Operating Temperature: 0 Cel; Shape: ROUND;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN; Maximum Power Dissipation: .1 W; JESD-609 Code: e3; Maximum Operating Temperature: 100 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 825; Maximum On State Current: .02 A; JESD-609 Code: e0;

TEKT5400S-ASZ by Vishay Intertechnology is a 3mm round phototransistor with peak wavelength of 920nm. It operates b/w -40 to 85°C, has max power dissipation of 0.15W, and collector-emitter breakdown voltage of 70V. Ideal for IR applications with nominal light current of 4mA and dark current up to 100nA.

PHOTO TRANSISTOR; Shape: ROUND; Infrared (IR) Range: YES; Peak Wavelength (nm): 850; Nominal Light Current: 10 mA; Additional Features: HIGH SENSITIVITY;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Configuration: SINGLE; Shape: SQUARE; Packing Method: TR, 7 INCH; Maximum Dark Current: 50 nA;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum On State Current: .1 A; Maximum Power Dissipation: .3 W;

QSD123.A4R0 by Qt Optoelectronics is a 5mm round phototransistor with max operating temp of 100°C and min of -40°C. It has nominal light current of 4mA, dark current of 100nA, and IR range. Ideal for applications requiring reliable photo detection in various temperature conditions.

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 125 Cel; Maximum Response Time: .000008 s; Minimum Operating Temperature: -60 Cel; Maximum Power Dissipation: .05 W;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Additional Features: TTL COMPATIBLE; No. of Functions: 1; Infrared (IR) Range: YES; Maximum Operating Temperature: 125 Cel;

PHOTO TRANSISTOR; Nominal Light Current: .02 mA; No. of Functions: 1; Shape: ROUND; Maximum Operating Temperature: 85 Cel; Size: 3.1 mm;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000008 s; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .015 A; Maximum Power Dissipation: .165 W; Maximum Response Time: .000008 s;

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .165 W; Maximum On State Current: .015 A; Peak Wavelength (nm): 950;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Configuration: SINGLE; Minimum Operating Temperature: -25 Cel; Maximum Dark Current: 100 nA;