NXP Semiconductors - BLF175

BLF175 by NXP Semiconductors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	BLF175
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 68 W; Maximum Power Dissipation Ambient: 68 W; Minimum DS Breakdown Voltage: 125 V;
Datasheet	BLF175 Datasheet

BLF175 Technical Details

NAME	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	4 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
No. of Terminals:	4
Maximum Power Dissipation (Abs):	68 W
Terminal Position:	RADIAL
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	O-CRFM-F4
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Highest Frequency Band:	VERY HIGH FREQUENCY BAND
Maximum Operating Temperature:	200 Cel
Case Connection:	ISOLATED
Maximum Power Dissipation Ambient:	68 W
Maximum Drain-Source On Resistance:	1.5 ohm
Moisture Sensitivity Level (MSL):	NOT APPLICABLE
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	125 V
Qualification:	Not Qualified
Additional Features:	HIGH RELIABILITY
Maximum Drain Current (Abs) (ID):	4 A
Peak Reflow Temperature (C):	NOT SPECIFIED

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