Solid State Devices - 2N3819

BF998E6327HTSA1 by Infineon Technologies is an N-CHANNEL RF FET with 12V DS Breakdown Voltage. Operating in DEPLETION MODE, it has ULTRA HIGH FREQUENCY BAND capabilities. This SMALL OUTLINE transistor is ideal for DUAL GATE applications in SOURCE connections.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: JUNCTION; Package Shape: RECTANGULAR; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: DEPLETION MODE; No. of Elements: 1; Terminal Form: NO LEAD;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Highest Frequency Band: C BAND; JESD-30 Code: S-PDSO-N8;

BF998,235 by NXP Semiconductors is an N-CHANNEL RF FET with a 12V DS Breakdown Voltage. It operates in DEPLETION MODE and has a max ID of 0.03A. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, this transistor features a GULL WING terminal form and can handle up to 0.2W power dissipation.

RF Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Moisture Sensitivity Level (MSL): NOT APPLICABLE; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Transistor Application: AMPLIFIER; Terminal Position: DUAL;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Transistor Application: AMPLIFIER; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 150 Cel;

Broadcom's ATF-55143-TR1 is an N-channel RF FET with 15.5 dB power gain, ideal for amplifier applications in C band frequencies. It features a 5V DS breakdown voltage, 0.1A drain current, and operates in enhancement mode. The transistor has a small outline package with gull wing terminals and can handle up to 0.27W power dissipation at 150°C ambient temperature.

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; No. of Terminals: 4; Terminal Finish: TIN; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; JESD-30 Code: O-PBCY-T3; Maximum Feedback Capacitance (Crss): 4 pF;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Transistor Application: AMPLIFIER; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): .06 A; Maximum Power Dissipation Ambient: .18 W; Maximum Drain Current (Abs) (ID): .06 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: O-CRDB-F4; Minimum DS Breakdown Voltage: 3 V; Highest Frequency Band: KU BAND;

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Minimum DS Breakdown Voltage: 30 V;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: DEPLETION MODE; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; Operating Mode: ENHANCEMENT MODE; No. of Terminals: 4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Position: BOTTOM; Package Style (Meter): CYLINDRICAL; Transistor Element Material: SILICON;