Onsemi - QSB363ZR

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .015 A; Maximum Response Time: .000006 s; Minimum Operating Temperature: -55 Cel;

Photo Transistors; Mounting Feature: SURFACE MOUNT; Maximum Response Time: .000006 s; Minimum Operating Temperature: -55 Cel; Maximum Power Dissipation: .165 W; Maximum Dark Current: 200 nA;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: MATTE TIN; Minimum Operating Temperature: -40 Cel; Peak Wavelength (nm): 880; Shape: ROUND;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000008 s; Infrared (IR) Range: YES; Maximum Dark Current: 25 nA; Additional Features: TTL COMPATIBLE;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Infrared (IR) Range: YES; Peak Wavelength (nm): 850; Maximum Response Time: .000008 s;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel; Maximum Response Time: .000008 s;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -60 Cel; Minimum Collector-emitter Breakdown Voltage: 50 V; Configuration: SINGLE; Maximum Dark Current: 25 nA;

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -55 Cel; Maximum Power Dissipation: .15 W; Maximum Dark Current: 100 nA; Maximum Operating Temperature: 100 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 100 nA; JESD-609 Code: e0; Maximum Operating Temperature: 85 Cel;

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Maximum Power Dissipation: .1 W; Size: 5 mm; Maximum On State Current: .05 A; Nominal Light Current: 12 mA;

PHOTO TRANSISTOR;

PHOTO TRANSISTOR; Configuration: SINGLE; No. of Functions: 1; Size: 1.2 mm; Nominal Light Current: .01 mA; Maximum Dark Current: 100 nA;

PHOTO TRANSISTOR; Mounting Feature: RADIAL MOUNT; Infrared (IR) Range: YES; Nominal Light Current: 7 mA; Maximum Dark Current: 100 nA; Shape: ROUND;

SFH3100F by Infineon Technologies is a phototransistor with a peak wavelength of 920nm. It has a max operating temperature of 85°C and a min operating temperature of -40°C. This through-hole mount device is commonly used in applications requiring low dark current and a max on-state current of 0.05A.

VEMT2023SLX01 by Vishay Intertechnology is a single configuration phototransistor with peak wavelength of 860nm. It operates in temperatures ranging from -40°C to 100°C and has a nominal light current of 2.7mA. This optoelectronic component is suitable for applications requiring infrared range detection and a min collector-emitter breakdown voltage of 20V.

PHOTO TRANSISTOR; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; No. of Functions: 1; Minimum Collector-emitter Breakdown Voltage: 20 V; Configuration: SINGLE;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Power Dissipation: .3 W; Maximum Dark Current: 100 nA;

QSB363.ZR by Qt Optoelectronics is a 1.9mm ROUND PHOTO TRANSISTOR with max operating temp of 85°C and min of -40°C. It has 0.7mA light current, 100nA dark current, and 30V breakdown voltage. Ideal for applications requiring precise light sensing in compact spaces.

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Size: 3.9 mm; Maximum Response Time: .0000035 s; Shape: ROUND;

QSD123.A4R0 by Qt Optoelectronics is a 5mm round phototransistor with max operating temp of 100°C and min of -40°C. It has nominal light current of 4mA, dark current of 100nA, and IR range. Ideal for applications requiring reliable photo detection in various temperature conditions.