NXP Semiconductors - LLE18150X

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 37.2 W; Maximum Collector Current (IC): 3 A; Qualification: Not Qualified;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 8 A; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 4.2 W; Maximum Collector Current (IC): .25 A; Additional Features: HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 40 A; Maximum Collector-Emitter Voltage: 55 V; Package Body Material: PLASTIC/EPOXY;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .2 A; Minimum Power Gain (Gp): 12 dB; Terminal Position: DUAL;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Maximum Collector Current (IC): 12 A; Terminal Position: DUAL;

MS2209 by Microsemi is a NPN BJT transistor with 7A IC, suitable for L Band applications. It has a ceramic-metal-sealed co-fired package and operates at max temp of 200°C. Ideal for amplifier circuits due to its single configuration and square package shape.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2000 MHz; Maximum Collector Current (IC): 4 A; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .2 A; Maximum Power Dissipation Ambient: 2 W; Qualification: Not Qualified;

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .0113 A; Package Style (Meter): UNCASED CHIP;

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .25 A; Terminal Form: FLAT; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 5500 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .3 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Collector Current (IC): 8.5 A; Minimum Power Gain (Gp): 6.5 dB;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 270 W; Maximum Collector Current (IC): 20 A; Minimum DC Current Gain (hFE): 20;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 3 A; No. of Terminals: 6; Transistor Application: AMPLIFIER;

RF Power Bipolar Transistors; Moisture Sensitivity Level (MSL): 1;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79.5 W; Maximum Collector Current (IC): 4.8 A; No. of Elements: 1;

RF Power Bipolar Transistors; Qualification: Not Qualified; Transistor Application: AMPLIFIER; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1 A; Package Style (Meter): FLANGE MOUNT; JESD-30 Code: R-CDFM-F2;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 10 A; Maximum Collector-Emitter Voltage: 27 V; Additional Features: HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS;