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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | BLV32F |
| Description | NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2000 MHz; Maximum Collector Current (IC): 4 A; Transistor Element Material: SILICON; |
| Datasheet | BLV32F Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Minimum Power Gain (Gp): | 16 dB |
| Nominal Transition Frequency (fT): | 2000 MHz |
| Package Body Material: | CERAMIC, METAL-SEALED COFIRED |
| Maximum Collector Current (IC): | 4 A |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | AMPLIFIER |
| Polarity or Channel Type: | NPN |
| Surface Mount: | NO |
| Minimum DC Current Gain (hFE): | 20 |
| No. of Terminals: | 6 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 32 V |
| Terminal Position: | RADIAL |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | O-CRFM-F6 |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | FLAT |
| Highest Frequency Band: | VERY HIGH FREQUENCY BAND |
| Maximum Operating Temperature: | 200 Cel |
| Case Connection: | ISOLATED |
| Maximum Power Dissipation Ambient: | 82 W |
