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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BFG235E6327 |
| Description | NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 5500 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .3 A; |
| Datasheet | BFG235E6327 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 5500 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | .3 A |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN RESISTOR |
| Transistor Element Material: | SILICON |
| Transistor Application: | AMPLIFIER |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| No. of Terminals: | 4 |
| Maximum Power Dissipation (Abs): | 2 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Highest Frequency Band: | L BAND |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | COLLECTOR |
| Polarity or Channel Type: | NPN |
| Minimum DC Current Gain (hFE): | 75 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 15 V |
| Additional Features: | BUILT IN EMITTER BALLASTING RESISTOR |
| Maximum Collector-Base Capacitance: | 3.6 pF |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
