NXP Semiconductors - BF904WRT/R

Broadcom ATF-521P8-BLK is an N-channel FET with 15.5 dB power gain, ideal for amplifier applications in L Band frequencies. With a max drain current of 0.5 A and operating temperature up to 150°C, it offers high electron mobility technology in a small outline package.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; JESD-30 Code: R-PDSO-G4; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; No. of Elements: 1; Terminal Position: DUAL;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; No. of Terminals: 4; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Terminal Form: WIRE; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Qualification: Not Qualified; JEDEC-95 Code: TO-92;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 160 Cel; Maximum Power Dissipation Ambient: .3 W; Qualification: Not Qualified;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Additional Features: LOW NOISE; No. of Terminals: 3;

RF Small Signal Field-Effect Transistors; JESD-609 Code: e1; Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu);

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Terminal Form: GULL WING; Maximum Drain Current (ID): .04 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: GALLIUM ARSENIDE;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (Abs) (ID): .03 A; Terminal Finish: Tin (Sn); Case Connection: SOURCE;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Maximum Drain Current (ID): .03 A; Terminal Position: DUAL;

N-CHANNEL; Maximum Drain Current (ID): .06 A; Maximum Drain Current (Abs) (ID): .06 A; Maximum Power Dissipation Ambient: .13 W;

N-CHANNEL; Surface Mount: YES; Terminal Form: GULL WING; Case Connection: SOURCE; Qualification: Not Qualified; Maximum Feedback Capacitance (Crss): .025 pF;

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Operating Mode: DEPLETION MODE; Field Effect Transistor Technology: JUNCTION; Transistor Element Material: SILICON;

RF Small Signal Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Moisture Sensitivity Level (MSL): NOT APPLICABLE; Peak Reflow Temperature (C): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Package Shape: ROUND; Package Style (Meter): CYLINDRICAL;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JEDEC-95 Code: TO-92; Field Effect Transistor Technology: JUNCTION; Maximum Operating Temperature: 125 Cel;