Eudyna Devices - FHX35X

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Transistor Application: AMPLIFIER; Package Style (Meter): CYLINDRICAL;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): .1 A; Package Shape: RECTANGULAR; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: LOW NOISE; Maximum Feedback Capacitance (Crss): .03 pF; JESD-30 Code: R-PDSO-G4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Position: BOTTOM; Transistor Element Material: SILICON; Maximum Feedback Capacitance (Crss): 2.5 pF;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-609 Code: e3; Transistor Application: AMPLIFIER; Terminal Form: FLAT;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G4; Maximum Feedback Capacitance (Crss): 45 pF;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Shape: ROUND; Operating Mode: DEPLETION MODE; No. of Terminals: 3;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Case Connection: SOURCE; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Qualification: Not Qualified; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

N-CHANNEL; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Operating Temperature: 125 Cel; Maximum Power Dissipation Ambient: .25 W; Field Effect Transistor Technology: METAL SEMICONDUCTOR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; No. of Terminals: 4; Transistor Application: AMPLIFIER;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Additional Features: LOW NOISE; Maximum Drain Current (ID): .03 A;

RF Small Signal Field-Effect Transistors; Moisture Sensitivity Level (MSL): NOT APPLICABLE; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; No. of Terminals: 4; Terminal Finish: TIN; Maximum Operating Temperature: 150 Cel;

Broadcom ATF-55143-TR2G is a N-channel RF FET with 15.5 dB power gain, ideal for amplifier applications in C band. It features 5V DS breakdown voltage, 0.1A drain current, and operates at up to 150°C. The transistor's high electron mobility technology ensures efficient performance in small outline package style.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Qualification: Not Qualified; Transistor Element Material: SILICON; Terminal Form: THROUGH-HOLE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; No. of Terminals: 4; Case Connection: SOURCE;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Case Connection: SOURCE; Maximum Time At Peak Reflow Temperature (s): 30;