NXP Semiconductors - BF901R-TAPE-13

RF Small Signal Field-Effect Transistors; Surface Mount: YES; JESD-30 Code: R-XUUC-N4; Operating Mode: DEPLETION MODE; Package Style (Meter): UNCASED CHIP; Minimum DS Breakdown Voltage: 6 V;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Drain Current (ID): .03 A; Minimum DS Breakdown Voltage: 6 V;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Operating Temperature: 200 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Package Shape: ROUND; Field Effect Transistor Technology: JUNCTION;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JESD-30 Code: O-PBCY-T3; No. of Elements: 1; Terminal Position: BOTTOM;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Field Effect Transistor Technology: JUNCTION; JEDEC-95 Code: TO-72; Terminal Form: WIRE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Qualification: Not Qualified; JESD-30 Code: R-PDSO-G3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified; Maximum Drain Current (ID): .1 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Form: WIRE; Maximum Feedback Capacitance (Crss): .8 pF; No. of Terminals: 4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Qualification: Not Qualified; Package Style (Meter): CYLINDRICAL;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; JESD-30 Code: R-PDSO-G4; Additional Features: LOW NOISE; Minimum DS Breakdown Voltage: 7 V;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JESD-609 Code: e0; Terminal Finish: TIN LEAD; Maximum Drain Current (ID): .1 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 30 V;

SMMBFJ310LT1G by Onsemi is an N-CHANNEL RF Small Signal FET with a max power dissipation of 0.225W and a max operating temperature of 150°C. It is surface mountable and commonly used in junction field effect transistor applications.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Terminal Position: DUAL; Field Effect Transistor Technology: JUNCTION;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 10 W; Moisture Sensitivity Level (MSL): NOT APPLICABLE; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JESD-609 Code: e0; Package Style (Meter): CYLINDRICAL; Maximum Feedback Capacitance (Crss): 2.5 pF;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; No. of Terminals: 4; Transistor Application: AMPLIFIER; Case Connection: SOURCE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Highest Frequency Band: X BAND; Maximum Power Dissipation Ambient: .58 W;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 160 Cel; Maximum Power Dissipation Ambient: .3 W; Qualification: Not Qualified;